Onsemi - 2N5460G

2N5460G by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number 2N5460G
Description P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .35 W; Transistor Element Material: SILICON; Transistor Application: AMPLIFIER;
Datasheet 2N5460G Datasheet
In Stock188
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 40
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: JUNCTION
Transistor Application: AMPLIFIER
Sub-Category: FET General Purpose Small Signal
Surface Mount: NO
Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)
No. of Terminals: 3
Maximum Power Dissipation (Abs): .35 W
Terminal Position: BOTTOM
Package Style (Meter): CYLINDRICAL
JESD-30 Code: O-PBCY-T3
No. of Elements: 1
Package Shape: ROUND
Terminal Form: THROUGH-HOLE
Operating Mode: DEPLETION MODE
Maximum Operating Temperature: 135 Cel
Maximum Feedback Capacitance (Crss): 2 pF
JEDEC-95 Code: TO-92
Polarity or Channel Type: P-CHANNEL
JESD-609 Code: e1
Qualification: Not Qualified
Peak Reflow Temperature (C): 260
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