Onsemi - 2N6036G

2N6036G by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number 2N6036G
Description PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 25 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): 4 A;
Datasheet 2N6036G Datasheet
In Stock352
NAME DESCRIPTION
Nominal Transition Frequency (fT): 25 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 4 A
Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Sub-Category: Other Transistors
Surface Mount: NO
Terminal Finish: MATTE TIN
No. of Terminals: 3
Maximum Power Dissipation (Abs): 1.5 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Maximum Operating Temperature: 150 Cel
Other Names: 2156-2N6036G
ONSONS2N6036G
2N6036GOS
2832-2N6036G
JEDEC-95 Code: TO-225AA
Polarity or Channel Type: PNP
Minimum DC Current Gain (hFE): 100
JESD-609 Code: e3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 80 V
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
352 $0.360 $126.720

Popular Products

Category Top Products