Onsemi - 2N7000BU

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2N7000BU by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number 2N7000BU
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Maximum Drain Current (Abs) (ID): .2 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet 2N7000BU Datasheet
In Stock13,254
NAME DESCRIPTION
Maximum Power Dissipation (Abs): .4 W
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): .2 A
Maximum Drain Current (Abs) (ID): .2 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Terminal Finish: TIN
JESD-609 Code: e3
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