Onsemi - 2SA1020RLRAG

  1. Home
  2. Onsemi - 2SA1020RLRAG
2SA1020RLRAG by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number 2SA1020RLRAG
Description PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): 2 A;
Datasheet 2SA1020RLRAG Datasheet
In Stock2,699
NAME DESCRIPTION
Nominal Transition Frequency (fT): 100 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 2 A
Configuration: SINGLE
Transistor Element Material: SILICON
Sub-Category: Other Transistors
Surface Mount: NO
Terminal Finish: TIN SILVER COPPER
No. of Terminals: 3
Maximum Power Dissipation (Abs): 1.5 W
Terminal Position: BOTTOM
Package Style (Meter): CYLINDRICAL
JESD-30 Code: O-PBCY-T3
No. of Elements: 1
Package Shape: ROUND
Terminal Form: THROUGH-HOLE
Maximum Operating Temperature: 150 Cel
Other Names: 2SA1020RLRAG-ND
2SA1020RLRAGOSTR
2SA1020RLRAGOSCT
2SA1020RLRAGOSDKR-ND
2156-2SA1020RLRAG-ONTR
ONSONS2SA1020RLRAG
2SA1020RLRAGOSDKR
2SA1020RLRAGOSDKRINACTIVE
JEDEC-95 Code: TO-92
Polarity or Channel Type: PNP
Minimum DC Current Gain (hFE): 40
JESD-609 Code: e1
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 50 V
Peak Reflow Temperature (C): 260
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
2,699 - -

Popular Products

Category Top Products

BC857B,215 by Nexperia

BC857B,215

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Maximum Operating Temperature: 150 Cel;
BC846BW,115 by Nexperia

BC846BW,115

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; No. of Terminals: 3;
BC807-40W,115 by NXP Semiconductors

BC807-40W,115

NXP Semiconductors

BC807-40W,115 by NXP Semiconductors is a PNP BJT transistor for switching applications. With a VCEsat of 0.7V and hFE of 250, it can handle up to 0.5A collector current. Operating at a max temperature of 150°C, this transistor has a transition frequency of 80MHz making it suitable for high-speed switching circuits.
JANTX2N2222A by Cobham Plc

JANTX2N2222A

Cobham Plc

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Minimum DC Current Gain (hFE): 30; Package Style (Meter): CYLINDRICAL;
MMBT2222AWT1G by Onsemi

MMBT2222AWT1G

Onsemi

MMBT2222AWT1G by Onsemi is a NPN BJT transistor with 3 terminals, ideal for amplifier applications. It has a max collector-emitter voltage of 40V, max collector current of 0.6A, and min DC current gain of 40. With a package style of small outline and surface mount capability, it operates at up to 150°C.
MMBT2222ALT1 by Motorola

MMBT2222ALT1

Motorola

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .6 A; Maximum Power Dissipation Ambient: .225 W;
MMBT3906 by Minilogic Device

MMBT3906

Minilogic Device

PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A; Maximum Operating Temperature: 150 Cel;
MMBT3906VL by Nexperia

MMBT3906VL

Nexperia

Nexperia's MMBT3906VL is a PNP BJT transistor with hFE of 30, VCEO of 40V, and ton of 70ns. Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and high transition frequency of 250MHz.
BC817-25QAZ by Nexperia

BC817-25QAZ

Nexperia

Small Signal Bipolar Transistors; Maximum Time At Peak Reflow Temperature (s): 30; Reference Standard: AEC-Q101; Moisture Sensitivity Level (MSL): 1; Terminal Finish: TIN; JESD-609 Code: e3;
2N2222A by Micro Commercial Components

2N2222A

Micro Commercial Components

Small Signal Bipolar Transistors; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; JESD-609 Code: e0;
2N3904 by Surge Components

2N3904

Surge Components

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Transistor Application: SWITCHING;
2N2905A by Texas Instruments

2N2905A

Texas Instruments

2N2905A by Texas Instruments is a PNP BJT transistor with max. power dissipation of 0.6W, hFE of 100, and max. collector-emitter voltage of 60V. Ideal for switching applications due to its fast turn-on/off times (45ns/100ns) and high transition frequency (200MHz).
2N2222A by Crystalonics

2N2222A

Crystalonics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
JANTX2N2222AUA by Microchip Technology

JANTX2N2222AUA

Microchip Technology

JANTX2N2222AUA by Microchip is a NPN BJT transistor with 4 terminals, ideal for switching applications. It has a max power dissipation of 0.5W, hFE of 30, and can handle up to 0.8A collector current. With a max operating temp of 200°C and fT of 250MHz, it meets MIL-19500/255 standards for high-performance electronics.
BC817-25 by Dc Components

BC817-25

Dc Components

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .5 A;
2N2907A by Continental Device India

2N2907A

Continental Device India

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A;
2N2219A by Swampscott Electronics

2N2219A

Swampscott Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .8 A;
MMBT2907A by Samsung

MMBT2907A

Samsung

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .6 A;
ULN2003AIDR by Texas Instruments

ULN2003AIDR

Texas Instruments

ULN2003AIDR by Texas Instruments is a NPN BJT transistor with 7 elements and 16 terminals. It has a max collector-emitter voltage of 50V and max collector current of 0.5A, suitable for switching applications in surface mount designs. The package is rectangular with gull wing terminals, ideal for small outline configurations.
BC846B by Panjit International

BC846B

Panjit International

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .1 A; No. of Elements: 1; Transistor Element Material: SILICON;