2SA1257-5-TB-E by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	2SA1257-5-TB-E
Description	PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 130 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .08 A;
Datasheet	2SA1257-5-TB-E Datasheet
In Stock	952

NAME	DESCRIPTION
Nominal Transition Frequency (fT):	130 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.08 A
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
Surface Mount:	YES
Terminal Finish:	Tin/Bismuth (Sn/Bi)
No. of Terminals:	3
Maximum Power Dissipation (Abs):	.2 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Maximum Operating Temperature:	125 Cel
Maximum Power Dissipation Ambient:	.2 W
Moisture Sensitivity Level (MSL):	1
Polarity or Channel Type:	PNP
Minimum DC Current Gain (hFE):	135
JESD-609 Code:	e6
Maximum Collector-Emitter Voltage:	160 V
Maximum Collector-Base Capacitance:	3.2 pF
Maximum VCEsat:	.7 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
952	$0.098	$93.296

OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Nominal Common Mode Reject Ratio: 96 dB;

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OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Package Equivalence Code: CAN8,.2;