Onsemi - 2SA1616

  1. Home
  2. Onsemi - 2SA1616
2SA1616 by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number 2SA1616
Description PNP; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A; No. of Elements: 1; Minimum DC Current Gain (hFE): 70;
Datasheet 2SA1616 Datasheet
In Stock2,149
NAME DESCRIPTION
Maximum Collector Current (IC): .1 A
Maximum Power Dissipation (Abs): .3 W
Transistor Element Material: SILICON
No. of Elements: 1
Sub-Category: BIP General Purpose Small Signal
Polarity or Channel Type: PNP
Surface Mount: NO
Minimum DC Current Gain (hFE): 70
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
2,149 - -

Popular Products

Category Top Products

2N2222A by Central Semiconductor

2N2222A

Central Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Transistor Application: SWITCHING; Transistor Element Material: SILICON;
2N2907A by Itt Semiconductor

2N2907A

Itt Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A;
2N2219A by Zetex Plc

2N2219A

Zetex Plc

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .8 A;
2N2907A by Tt Electronics Plc

2N2907A

Tt Electronics Plc

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; JEDEC-95 Code: TO-206AA;
BC847,215 by NXP Semiconductors

BC847,215

NXP Semiconductors

NXP Semiconductors' BC847,215 is a NPN BJT transistor with VCEsat of 0.6V, hFE of 110, and IC of 0.1A. Ideal for switching applications in small outline packages with 3 terminals. Operates at max temp of 150°C and has a transition frequency of 100MHz.
JANTX2N2222A by Silicon Transistor

JANTX2N2222A

Silicon Transistor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
BC846BW-7-F by Diodes Incorporated

BC846BW-7-F

Diodes Incorporated

BC846BW-7-F by Diodes Inc. is a NPN small signal bipolar junction transistor (BJT) with a max collector-emitter voltage of 65V and a max collector current of 0.1A. It is commonly used for switching applications due to its high DC current gain (hFE) of 200 and fast nominal transition frequency (fT) of 300MHz.
BC846BLT1G by Onsemi

BC846BLT1G

Onsemi

BC846BLT1G by Onsemi is a NPN BJT transistor for switching applications. It has VCEsat of 0.6V, hFE of 200, and fT of 100MHz. With max ratings of 65V VCEO and 0.1A IC, it operates b/w -55 to 150°C.
BC817-25,235 by NXP Semiconductors

BC817-25,235

NXP Semiconductors

NXP Semiconductors' BC817-25,235 is a NPN BJT transistor with max VCEsat of 0.7V and hFE of 160. Ideal for switching applications, it has a max IC of 0.5A and operates up to 150°C. Its small outline package with gull wing terminals makes it suitable for surface mount designs.
2N2219A by Texas Instruments

2N2219A

Texas Instruments

2N2219A by Texas Instruments is a NPN BJT transistor with max. power dissipation of 0.8W, max. collector-emitter voltage of 40V, and max. collector current of 0.8A. It is commonly used for switching applications due to its fast turn on time (35ns) and high transition frequency (300MHz).
2N3904 by SPC TECHNOLOGY/ MULTICOMP

2N3904

SPC TECHNOLOGY/ MULTICOMP

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Maximum Turn Off Time (toff): 250 ns;
BC547B by Diodes Incorporated

BC547B

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
2N2222A by Semicoa

2N2222A

Semicoa

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
BC817-40QAZ by Nexperia

BC817-40QAZ

Nexperia

Small Signal Bipolar Transistors; Terminal Finish: TIN; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 260; JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): 30;
MMBT3904Q-7-F by Diodes Incorporated

MMBT3904Q-7-F

Diodes Incorporated

MMBT3904Q-7-F by Diodes Inc. is a NPN BJT transistor for switching applications. It has a VCEsat of 0.3V, hFE of 30, and can handle IC up to 0.2A. With a max operating temperature of 150°C, it is ideal for small outline surface mount designs requiring fast switching speeds.
BC846B by Weitronic Enterprise

BC846B

Weitronic Enterprise

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
2N2907A by NXP Semiconductors

2N2907A

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; Package Body Material: METAL;
SBC817-40LT3G by Good-ark Electronics

SBC817-40LT3G

Good-ark Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .5 A;
BC856B,215 by Nexperia

BC856B,215

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Maximum Operating Temperature: 150 Cel;
BC547C by National Semiconductor

BC547C

National Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;