2SA2029K3T5G by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	2SA2029K3T5G
Description	PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 140 MHz; Maximum Collector Current (IC): .1 A; Package Shape: RECTANGULAR;
Datasheet	2SA2029K3T5G Datasheet
In Stock	1,922

NAME	DESCRIPTION
Nominal Transition Frequency (fT):	140 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.1 A
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	AMPLIFIER
Polarity or Channel Type:	PNP
Surface Mount:	YES
Minimum DC Current Gain (hFE):	120
Terminal Finish:	MATTE TIN
JESD-609 Code:	e3
No. of Terminals:	3
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	50 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-F3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Maximum Operating Temperature:	150 Cel

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,922	-	-

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; No. of Terminals: 3;

NXP Semiconductors' BSS138PS,115 is a N-CHANNEL FET with 60V DS breakdown voltage and 0.32A max drain current. Ideal for switching applications, it features a 1.6 ohm max on-resistance and operates in enhancement mode. The transistor comes in a small outline package with GULL WING terminals, making it suitable for surface mount designs.

RECTIFIER DIODE; Surface Mount: YES; Maximum Forward Voltage (VF): 1 V; No. of Elements: 1; Maximum Output Current: .2 A; Config: SINGLE;

TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 18 V; Nominal Breakdown Voltage: 21.05 V; Maximum Time At Peak Reflow Temperature (s): 10; JESD-609 Code: e3;

NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Maximum Operating Temperature: 85 Cel; Terminal Form: THROUGH-HOLE;

MBR0520LT3G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.385V and output current of 0.5A. It operates b/w -65°C to 125°C, ideal for applications requiring high-speed switching and low power loss in compact electronic devices. The package style is small outline, making it suitable for surface mount designs in various electronics.

MBRS140T3G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.6V and max output current of 1A. It operates b/w -65°C to 125°C, making it suitable for various applications requiring high-speed switching and low power loss in a small outline package style. The diode's matte tin terminal finish and dual position terminals enhance its performance in surface mount configurations.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Terminal Finish: Matte Tin (Sn) - annealed; Transistor Element Material: SILICON;

2N7002 by Vishay Intertechnology is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.115A Drain Current, and 7.5 ohm On Resistance. Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE, suitable for surface mount with GULL WING terminals.

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 2; No. of Terminals: 6; Minimum DS Breakdown Voltage: 60 V;