Onsemi - 2SA984D

  1. Home
  2. Onsemi - 2SA984D
2SA984D by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number 2SA984D
Description PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): .5 A; No. of Elements: 1;
Datasheet 2SA984D Datasheet
In Stock1,742
NAME DESCRIPTION
Maximum Collector Current (IC): .5 A
Maximum Power Dissipation (Abs): .6 W
Configuration: SINGLE
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Sub-Category: Other Transistors
Polarity or Channel Type: PNP
Surface Mount: NO
Minimum DC Current Gain (hFE): 60
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,742 - -

Popular Products

Category Top Products

BC807-40 by Allegro MicroSystems

BC807-40

Allegro MicroSystems

PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .5 A; Terminal Finish: Tin/Lead (Sn/Pb);
2N3906 by Bytesonic Electronics

2N3906

Bytesonic Electronics

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
D44H8 by Samsung

D44H8

Samsung

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 10 A;
BD138 by Sid Microeletronica S/a

BD138

Sid Microeletronica S/a

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 75 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;
BC337-16 by Shanghai Lunsure Electronic Technology

BC337-16

Shanghai Lunsure Electronic Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .8 A; Maximum Operating Temperature: 150 Cel;
BC817-25 by Allegro MicroSystems

BC817-25

Allegro MicroSystems

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .5 A; Terminal Finish: Tin/Lead (Sn/Pb);
MMBT2222ALT1 by Jiangsu Changjiang Electronics Technology

MMBT2222ALT1

Jiangsu Changjiang Electronics Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .6 A;
BC857C by Vishay Intertechnology

BC857C

Vishay Intertechnology

Vishay Intertechnology's BC857C is a PNP transistor with max power dissipation of 0.31W, min DC current gain of 420, and max operating temp of 150°C. Ideal for applications requiring a single configuration in surface mount technology, such as low-power amplification circuits.
2N2222A by Semiconductors

2N2222A

Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
D44H8 by Intersil

D44H8

Intersil

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 10 A;
BD139-10 by National Semiconductor

BD139-10

National Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 13 W; Maximum Collector Current (IC): 1.5 A;
BC547B by Weitron Technology

BC547B

Weitron Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
2N3055 by Harris Semiconductor

2N3055

Harris Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;
TIP42C by Mospec Semiconductor

TIP42C

Mospec Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
BC817-25 by Shandong Yiguang Electronic Joint Stock

BC817-25

Shandong Yiguang Electronic Joint Stock

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .5 A;
D44H11 by Semiconductor Technology

D44H11

Semiconductor Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 10 A;
BSS83PE6327 by Infineon Technologies

BSS83PE6327

Infineon Technologies

BSS83PE6327 by Infineon is a P-CHANNEL transistor with a max drain current of 0.33A and power dissipation of 0.36W. It operates in enhancement mode, suitable for applications requiring high temperature resistance up to 150°C. This surface-mount transistor utilizes metal-oxide semiconductor technology, making it ideal for various electronic circuits.
TIP125 by Harris Semiconductor

TIP125

Harris Semiconductor

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Minimum DC Current Gain (hFE): 1000;
2N3055 by Transpro Electronics

2N3055

Transpro Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;
2N3019 by Boca Semiconductor

2N3019

Boca Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): 1 A;