Onsemi - 2SA984KD

  1. Home
  2. Onsemi - 2SA984KD
2SA984KD by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number 2SA984KD
Description PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): .5 A; No. of Elements: 1;
Datasheet 2SA984KD Datasheet
In Stock2,193
NAME DESCRIPTION
Maximum Collector Current (IC): .5 A
Maximum Power Dissipation (Abs): .6 W
Configuration: SINGLE
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Sub-Category: Other Transistors
Polarity or Channel Type: PNP
Surface Mount: NO
Minimum DC Current Gain (hFE): 60
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
2,193 - -

Popular Products

Category Top Products

BDX53C by Inchange Semiconductor

BDX53C

Inchange Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 20 MHz; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 8 A;
TIP117 by National Semiconductor

TIP117

National Semiconductor

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 4 A; Minimum DC Current Gain (hFE): 500;
BC846B by Allegro MicroSystems

BC846B

Allegro MicroSystems

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
MMBT3906 by Telefunken Microelectronics

MMBT3906

Telefunken Microelectronics

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;
BD139 by Tesla Elektronicke Soucastky

BD139

Tesla Elektronicke Soucastky

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;
MMBT5551 by Samsung

MMBT5551

Samsung

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .6 A; Terminal Finish: Tin/Lead (Sn/Pb);
TIP110 by General Electric Solid State

TIP110

General Electric Solid State

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Maximum Operating Temperature: 150 Cel;
TIP115 by Philips Semiconductors

TIP115

Philips Semiconductors

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 4 A; Maximum Operating Temperature: 150 Cel;
TIP29C by Plessey Semiconductors Discrete Components Div

TIP29C

Plessey Semiconductors Discrete Components Div

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 1 A;
TIP42C by National Semiconductor

TIP42C

National Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
2N2907A by North American Philips Discrete Products Div

2N2907A

North American Philips Discrete Products Div

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A;
BC337-16 by Philips Semiconductors

BC337-16

Philips Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .8 A; JESD-609 Code: e3;
BD139-10 by Secos

BD139-10

Secos

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 13 W; Maximum Collector Current (IC): 1.5 A;
TIP42C by General Electric Solid State

TIP42C

General Electric Solid State

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
BC337-16 by Vishay Intertechnology

BC337-16

Vishay Intertechnology

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .8 A; Maximum Operating Temperature: 150 Cel;
TIP117 by Asi Semiconductor

TIP117

Asi Semiconductor

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 4 A; Minimum DC Current Gain (hFE): 500;
TIP125 by Sinyork

TIP125

Sinyork

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .065 W; Maximum Collector Current (IC): .005 A; Minimum DC Current Gain (hFE): 1000;
TIP42C by Silicon Group

TIP42C

Silicon Group

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
PMF170XP,115 by NXP Semiconductors

PMF170XP,115

NXP Semiconductors

NXP Semiconductors PMF170XP,115 is a P-CHANNEL FET with 1A max drain current and 0.36W power dissipation. Ideal for surface mount applications, it operates in enhancement mode up to 150°C. Suitable for various electronic devices requiring efficient power management.
BC817-16 by Vishay Intertechnology

BC817-16

Vishay Intertechnology

BC817-16 by Vishay Intertechnology is an NPN transistor with a max power dissipation of 0.33W and a min DC current gain of 100. It is suitable for surface mount applications and can handle a max collector current of 0.5A.