2SB1118T by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	2SB1118T
Description	PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .7 A;
Datasheet	2SB1118T Datasheet
In Stock	750

NAME	DESCRIPTION
Nominal Transition Frequency (fT):	250 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.7 A
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	AMPLIFIER
Sub-Category:	Other Transistors
Polarity or Channel Type:	PNP
Surface Mount:	YES
Minimum DC Current Gain (hFE):	200
No. of Terminals:	3
Maximum Power Dissipation (Abs):	.5 W
Maximum Collector-Emitter Voltage:	15 V
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-F3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Maximum Operating Temperature:	150 Cel
Case Connection:	COLLECTOR

Pricing (USD)

Qty.	Unit Price	Ext. Price
750	-	-

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