2SB1120 by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	2SB1120
Description	PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 1.3 W; Maximum Collector Current (IC): 2.5 A;
Datasheet	2SB1120 Datasheet
In Stock	2,089

NAME	DESCRIPTION
Nominal Transition Frequency (fT):	250 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	2.5 A
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
Sub-Category:	Other Transistors
Polarity or Channel Type:	PNP
Surface Mount:	YES
Minimum DC Current Gain (hFE):	70
No. of Terminals:	3
Maximum Power Dissipation (Abs):	1.3 W
Maximum Collector-Emitter Voltage:	10 V
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-F3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Maximum Operating Temperature:	150 Cel
Maximum Collector-Base Capacitance:	70 pF
Case Connection:	COLLECTOR
Maximum VCEsat:	.45 V
Maximum Power Dissipation Ambient:	.5 W

Pricing (USD)

Qty.	Unit Price	Ext. Price
2,089	-	-

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