Onsemi - 2SB1120E

  1. Home
  2. Onsemi - 2SB1120E
2SB1120E by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number 2SB1120E
Description PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): 2.5 A;
Datasheet 2SB1120E Datasheet
In Stock1,881
NAME DESCRIPTION
Nominal Transition Frequency (fT): 250 MHz
Maximum Collector Current (IC): 2.5 A
Maximum Power Dissipation (Abs): .5 W
Configuration: SINGLE
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Sub-Category: Other Transistors
Polarity or Channel Type: PNP
Surface Mount: YES
Minimum DC Current Gain (hFE): 100
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,881 - -

Popular Products

Category Top Products

BD139 by North American Philips Discrete Products Div

BD139

North American Philips Discrete Products Div

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;
2N2219A by Transpro Electronics

2N2219A

Transpro Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .8 A;
TIP32C by Semitronics

TIP32C

Semitronics

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 3 A;
MPSA42 by Semiconductors

MPSA42

Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .5 A;
MMBT5551 by Unisonic Technologies

MMBT5551

Unisonic Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .6 A;
BF862 by Philips Semiconductors

BF862

Philips Semiconductors

N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Terminal Finish: MATTE TIN; Field Effect Transistor Technology: JUNCTION; Peak Reflow Temperature (C): 260;
BC847B/DG,215 by NXP Semiconductors

BC847B/DG,215

NXP Semiconductors

NXP Semiconductors BC847B/DG,215 is an NPN transistor with a single configuration for surface mount applications. It features a max power dissipation of 0.25W, min DC current gain of 200, and max operating temp of 150°C. Ideal for low-power electronic circuits requiring high frequency operation up to 100MHz.
BC548 by Semiconductors

BC548

Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
BC337-40 by Shanghai Lunsure Electronic Technology

BC337-40

Shanghai Lunsure Electronic Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .8 A; No. of Elements: 1;
BC546B by Allegro MicroSystems

BC546B

Allegro MicroSystems

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
TIP47 by Thomson Consumer Electronics

TIP47

Thomson Consumer Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 5 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 1 A;
TIP112 by General Electric Solid State

TIP112

General Electric Solid State

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 4 A; Minimum DC Current Gain (hFE): 500;
TIP111 by National Semiconductor

TIP111

National Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 4 A; JESD-609 Code: e0;
BUX87 by North American Philips Discrete Products Div

BUX87

North American Philips Discrete Products Div

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): .5 A; Terminal Finish: Tin/Lead (Sn/Pb);
TIP42C by Sinyork

TIP42C

Sinyork

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
BC547C by North American Philips Discrete Products Div

BC547C

North American Philips Discrete Products Div

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
BS170 by Calogic

BS170

Calogic

Other Transistors;
BC846B by Allegro MicroSystems

BC846B

Allegro MicroSystems

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
TIP110 by Intersil

TIP110

Intersil

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Minimum DC Current Gain (hFE): 500;
BC847C/AU,215 by NXP Semiconductors

BC847C/AU,215

NXP Semiconductors

BC847C/AU,215 by NXP Semiconductors is an NPN transistor with a single configuration. It has a max power dissipation of 0.25W and a min DC current gain of 420. Ideal for applications requiring a max collector current of 0.1A, such as in high-frequency circuits up to 100MHz operating at temperatures up to 150°C.