Onsemi - 2SB1123T

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2SB1123T by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number 2SB1123T
Description PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): 1.3 W; Maximum Collector Current (IC): 2 A;
Datasheet 2SB1123T Datasheet
In Stock1,837
NAME DESCRIPTION
Nominal Transition Frequency (fT): 150 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 2 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Sub-Category: Other Transistors
Polarity or Channel Type: PNP
Surface Mount: YES
Minimum DC Current Gain (hFE): 200
No. of Terminals: 3
Maximum Power Dissipation (Abs): 1.3 W
Maximum Collector-Emitter Voltage: 50 V
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-F3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Maximum Operating Temperature: 150 Cel
Maximum Collector-Base Capacitance: 22 pF
Case Connection: COLLECTOR
Maximum VCEsat: .7 V
Maximum Power Dissipation Ambient: .5 W
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