Onsemi - 2SB1203S-E-R

  1. Home
  2. Onsemi - 2SB1203S-E-R
2SB1203S-E-R by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number 2SB1203S-E-R
Description Power Bipolar Transistors;
Datasheet 2SB1203S-E-R Datasheet
In Stock2,263
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
2,263 - -

Popular Products

Category Top Products

TIP125 by Motorola

TIP125

Motorola

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 4 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A;
JAN2N3055 by M/a-com Technology Solutions

JAN2N3055

M/a-com Technology Solutions

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 15 A; Terminal Form: PIN/PEG; Minimum DC Current Gain (hFE): 5;
TIP147 by Central Semiconductor

TIP147

Central Semiconductor

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 10 A; Transistor Element Material: SILICON;
TIP115 by Continental Device India

TIP115

Continental Device India

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; No. of Terminals: 3;
MJD44H11RLG by Onsemi

MJD44H11RLG

Onsemi

MJD44H11RLG by Onsemi is a NPN BJT transistor with 80V VCEO, 8A IC, and 20W Ptot. Ideal for switching applications, it has a hFE of 40 and operates up to 150°C. The GULL WING package style makes it suitable for surface mount designs.
BD679A by Central Semiconductor

BD679A

Central Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 1 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 4 A;
ULN2803A by STMicroelectronics

ULN2803A

STMicroelectronics

NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; No. of Elements: 8; Minimum DC Current Gain (hFE): 1000;
JANTX2N3055 by Aeroflex/metelics

JANTX2N3055

Aeroflex/metelics

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 15 A; No. of Terminals: 2; Terminal Position: BOTTOM;
TIP41CG by Onsemi

TIP41CG

Onsemi

TIP41CG by Onsemi is a NPN power BJT with 65W max power dissipation, 100V max collector-emitter voltage, and 6A max collector current. Ideal for switching applications, it has a min hFE of 15 and operates at up to 150°C. Its package style is flange mount with through-hole terminals.
BCP56-16 by Weitron Technology

BCP56-16

Weitron Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 130 MHz; Maximum Collector Current (IC): 1 A; Package Body Material: PLASTIC/EPOXY;
BD13916STU by Fairchild Semiconductor

BD13916STU

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 12.5 W; Maximum Collector Current (IC): 1.5 A; Package Style (Meter): FLANGE MOUNT;
MJE3055T by New Jersey Semiconductor Products

MJE3055T

New Jersey Semiconductor Products

NPN; Configuration: SINGLE; Nominal Transition Frequency (fT): 2 MHz; Maximum Collector Current (IC): 10 A; Maximum Collector-Emitter Voltage: 60 V; No. of Elements: 1;
TIP41C by Samsung

TIP41C

Samsung

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
JANTXV2N3055 by Aeroflex/metelics

JANTXV2N3055

Aeroflex/metelics

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 15 A; JESD-30 Code: O-MBFM-P2; No. of Elements: 1;
TIP117 by Fairchild Semiconductor

TIP117

Fairchild Semiconductor

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Qualification: Not Qualified;
TIP115 by Inchange Semiconductor

TIP115

Inchange Semiconductor

PNP; Configuration: DARLINGTON WITH BUILT-IN RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Maximum Power Dissipation Ambient: 2 W;
TIP147 by Mospec Semiconductor

TIP147

Mospec Semiconductor

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 10 A; Maximum Operating Temperature: 150 Cel;
TIP110 by Texas Instruments

TIP110

Texas Instruments

TIP110 by Texas Instruments is a NPN Darlington BJT transistor with 500 min hFE. It has a max power dissipation of 50W and can handle up to 60V collector-emitter voltage. Ideal for applications requiring high current gain and power dissipation in through-hole mounting configurations.
BD13916STU by Onsemi

BD13916STU

Onsemi

BD13916STU by Onsemi is a NPN BJT transistor with 80V VCEO, 1.5A IC, and 12.5W Ptot. Ideal for switching applications, it has hFE of min. 100 and operates up to 150°C. The package is through-hole with matte tin finish, suitable for flange mount configurations.
TIP111 by Microsemi

TIP111

Microsemi

NPN; Surface Mount: NO; Maximum Collector Current (IC): 2 A; Terminal Position: SINGLE; JESD-30 Code: R-PSFM-T3; Package Body Material: PLASTIC/EPOXY;