Onsemi - 2SB1203S-E-T

  1. Home
  2. Onsemi - 2SB1203S-E-T
2SB1203S-E-T by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number 2SB1203S-E-T
Description Power Bipolar Transistors;
Datasheet 2SB1203S-E-T Datasheet
In Stock2,416
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
2,416 - -

Popular Products

Category Top Products

FZT851TA by Diodes Incorporated

FZT851TA

Diodes Incorporated

FZT851TA by Diodes Inc. is a NPN BJT transistor with 60V VCEO, 6A IC, and 3W Ptot. Ideal for switching applications, it has hFE of min. 100 and fT of 130MHz. Its small outline package makes it suitable for surface mount designs in various electronic devices.
TIP122 by Microsemi

TIP122

Microsemi

NPN; Surface Mount: NO; Maximum Collector Current (IC): 5 A; JEDEC-95 Code: TO-220; Package Style (Meter): FLANGE MOUNT; Package Shape: RECTANGULAR;
2SC5200 by New Jersey Semiconductor Products

2SC5200

New Jersey Semiconductor Products

NPN; Configuration: SINGLE; Nominal Transition Frequency (fT): 30 MHz; Maximum Collector Current (IC): 15 A; Transistor Element Material: SILICON; No. of Elements: 1;
TIP110 by Transys Electronics

TIP110

Transys Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Terminal Form: THROUGH-HOLE;
BD679A by Baneasa S A

BD679A

Baneasa S A

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 4 A; Case Connection: ISOLATED; Terminal Form: THROUGH-HOLE;
2N3055 by New Jersey Semiconductor Products

2N3055

New Jersey Semiconductor Products

NPN; Configuration: SINGLE; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Collector Current (IC): 15 A; Maximum Collector-Emitter Voltage: 60 V; Transistor Element Material: SILICON;
BUV48A by New Jersey Semiconductor Products

BUV48A

New Jersey Semiconductor Products

NPN; Configuration: SINGLE; Maximum Collector Current (IC): 15 A; No. of Elements: 1; Maximum Collector-Emitter Voltage: 450 V; Transistor Element Material: SILICON;
TIP125 by Microsemi

TIP125

Microsemi

PNP; Surface Mount: NO; Maximum Collector Current (IC): 5 A; Minimum DC Current Gain (hFE): 1000; Terminal Position: SINGLE; Case Connection: ISOLATED;
ULN2804A by Motorola

ULN2804A

Motorola

ULN2804A by Motorola is a power BJT with NPN polarity and 8 banks of Darlington configuration. It has a max VCEsat of 1.6V and can handle a max collector current (IC) of 0.5A. This transistor is commonly used for switching applications due to its built-in diode and resistor.
MJD117T4 by Continental Device India

MJD117T4

Continental Device India

PNP; Configuration: DARLINGTON; Surface Mount: YES; Nominal Transition Frequency (fT): 25 MHz; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): 2 A;
BDX53C by Continental Device India

BDX53C

Continental Device India

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 20 MHz; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 8 A;
TIP115 by New Jersey Semiconductor Products

TIP115

New Jersey Semiconductor Products

PNP; Configuration: SINGLE; Maximum Collector Current (IC): 2 A; Maximum Collector-Emitter Voltage: 60 V; No. of Elements: 1; Transistor Element Material: SILICON;
TIP50 by Continental Device India

TIP50

Continental Device India

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 1 A;
TIP127 by New Jersey Semiconductor Products

TIP127

New Jersey Semiconductor Products

PNP; Configuration: SINGLE; Maximum Collector Current (IC): 5 A; No. of Elements: 1; Minimum DC Current Gain (hFE): 1000; Transistor Element Material: SILICON;
JANTX2N3055 by Api Technologies

JANTX2N3055

Api Technologies

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;
BD13916STU by Fairchild Semiconductor

BD13916STU

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 12.5 W; Maximum Collector Current (IC): 1.5 A; Package Style (Meter): FLANGE MOUNT;
MJD127T4G by Onsemi

MJD127T4G

Onsemi

MJD127T4G by Onsemi is a PNP BJT with Darlington configuration, ideal for switching applications. It features a max collector-emitter voltage of 100V, collector current of 8A, and power dissipation of 20W. With a transition frequency of 4MHz, it operates b/w -65 to 150°C making it suitable for various power control circuits.
BD139 by Fairchild Semiconductor

BD139

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;
TIP41C by Secos

TIP41C

Secos

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
TIP32C by Semiconductors

TIP32C

Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 3 A;