Onsemi - 2SB1203S-TL-H-S

  1. Home
  2. Onsemi - 2SB1203S-TL-H-S
2SB1203S-TL-H-S by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number 2SB1203S-TL-H-S
Description Power Bipolar Transistors;
Datasheet 2SB1203S-TL-H-S Datasheet
In Stock225
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
225 - -

Popular Products

Category Top Products

TIP117 by Bourns

TIP117

Bourns

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 4 A; Minimum DC Current Gain (hFE): 500; Maximum Collector-Emitter Voltage: 100 V;
2N2905A by Vpt Components

2N2905A

Vpt Components

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): .6 A; Maximum Turn Off Time (toff): 300 ns;
BDW93C by Power Innovations

BDW93C

Power Innovations

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 12 A; Terminal Form: THROUGH-HOLE; Case Connection: COLLECTOR;
TIP147 by Onsemi

TIP147

Onsemi

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 4 MHz; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 10 A;
BD679 by Onsemi

BD679

Onsemi

BD679 by Onsemi is a NPN Power BJT with 40W power dissipation, ideal for amplifier applications. Featuring a Darlington configuration, it has hFE of 750 and can handle up to 80V collector-emitter voltage. This transistor operates at temperatures up to 150°C in a through-hole package style.
TIP110 by Semiconductors

TIP110

Semiconductors

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Maximum Operating Temperature: 150 Cel;
MJD44H11T4-A by STMicroelectronics

MJD44H11T4-A

STMicroelectronics

STMicroelectronics' MJD44H11T4-A is an NPN BJT transistor with 80V VCE, 8A IC, and 20W Ptot. Ideal for switching applications, it comes in a small outline package with Gull Wing terminals and can operate up to 150°C.
ULN2802A by Motorola

ULN2802A

Motorola

NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Transistor Application: SWITCHING; Qualification: Not Qualified;
TIP36C by New England Semiconductor

TIP36C

New England Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 25 A; Minimum DC Current Gain (hFE): 15;
BD139 by Baneasa S A

BD139

Baneasa S A

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Collector Current (IC): 1 A; JEDEC-95 Code: TO-126;
BCX5616TA by Diodes Incorporated

BCX5616TA

Diodes Incorporated

BCX5616TA by Diodes Inc. is a NPN BJT transistor for switching applications. Features include VCEsat of 0.5V, hFE of 100, and IC of 1A. With a max operating temp of 150°C, it has a collector-emitter voltage of 80V and transition frequency of 150MHz.
2N3055H by Tt Electronics Plc

2N3055H

Tt Electronics Plc

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): .8 MHz; Maximum Collector Current (IC): 15 A; Terminal Form: PIN/PEG;
BD243C by Motorola

BD243C

Motorola

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 6 A; Maximum VCEsat: 1.5 V;
MJE340 by SPC TECHNOLOGY/ MULTICOMP

MJE340

SPC TECHNOLOGY/ MULTICOMP

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Package Style (Meter): FLANGE MOUNT; No. of Terminals: 3;
JAN2N2219A by Vpt Components

JAN2N2219A

Vpt Components

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): .8 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
TIP35C by Power Innovations

TIP35C

Power Innovations

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 25 A; Terminal Position: SINGLE; Qualification: Not Qualified;
MJD127T4 by Motorola

MJD127T4

Motorola

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 4 MHz; Maximum Collector Current (IC): 8 A; Maximum VCEsat: 4 V;
TIP41-C by Secos

TIP41-C

Secos

Secos TIP41-C is a NPN BJT transistor with max VCEsat of 1.5V, ideal for switching applications. It has a max power dissipation of 65W and max collector current of 6A. With a min hFE of 15, it operates up to 150°C, making it suitable for high-power electronic circuits.
TIP111 by Taitron Components

TIP111

Taitron Components

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 2 A; Peak Reflow Temperature (C): NOT SPECIFIED; Terminal Position: SINGLE;
2N3055H by Solitron Devices

2N3055H

Solitron Devices

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): .8 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;