Onsemi - 2SB1203T-TL-E-Q

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2SB1203T-TL-E-Q by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number 2SB1203T-TL-E-Q
Description Power Bipolar Transistors;
Datasheet 2SB1203T-TL-E-Q Datasheet
In Stock447
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TIP42C by Forward International Electronics

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TIP122 by Changzhou Galaxy Century Microelectronics

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MJD45H11T4 by STMicroelectronics

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ULN2002AN by Texas Instruments

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TIP36C by New Jersey Semiconductor Products

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BUV48A by Mospec Semiconductor

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TIP41C by Samsung

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NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
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PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Minimum DC Current Gain (hFE): 1000;
TIP112 by Kec

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NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Maximum Collector-Emitter Voltage: 100 V;
ULN2804A by Onsemi

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2SC5200 by STMicroelectronics

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Motorola

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