2SB1203T-TL-E by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	2SB1203T-TL-E
Description	NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 180 MHz; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): 5 A;
Datasheet	2SB1203T-TL-E Datasheet
In Stock	944

NAME	DESCRIPTION
Nominal Transition Frequency (fT):	180 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	5 A
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
Surface Mount:	YES
Terminal Finish:	TIN BISMUTH
No. of Terminals:	2
Maximum Power Dissipation (Abs):	20 W
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Maximum Operating Temperature:	150 Cel
Case Connection:	COLLECTOR
Maximum Power Dissipation Ambient:	1 W
Moisture Sensitivity Level (MSL):	1
Polarity or Channel Type:	NPN
Minimum DC Current Gain (hFE):	35
JESD-609 Code:	e6
Maximum Collector-Emitter Voltage:	50 V
Maximum Collector-Base Capacitance:	40 pF
Peak Reflow Temperature (C):	260
Maximum VCEsat:	.4 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
944	$0.394	$371.936

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