Onsemi - 2SB1203T-TL-H-S

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2SB1203T-TL-H-S by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number 2SB1203T-TL-H-S
Description Power Bipolar Transistors;
Datasheet 2SB1203T-TL-H-S Datasheet
In Stock638
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TIP122 by Changzhou Galaxy Century Microelectronics

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JANTX2N3055 by Aeroflex/metelics

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JAN2N3055 by Api Technologies

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NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;
TIP120 by Micro Commercial Components

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Power Bipolar Transistors; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; No. of Elements: 1;
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TIP110 by Texas Instruments

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TIP42C by Micro Commercial Components

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BUX87 by New Jersey Semiconductor Products

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NPN; Configuration: SINGLE; Nominal Transition Frequency (fT): 20 MHz; Maximum Collector Current (IC): .5 A; Maximum Collector-Emitter Voltage: 450 V; No. of Elements: 1;
TIP110 by Crimson Semiconductor

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Crimson Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 2 MHz; Maximum Collector Current (IC): 2 A; Maximum VCEsat: 2.5 V;
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TIP111 by Diotec Semiconductor Ag

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MJD127T4 by Onsemi is a PNP BJT transistor with Darlington configuration, ideal for switching applications. It has a max collector-emitter voltage of 100V, max collector current of 8A, and min DC current gain of 100. With a package style of small outline and surface mount capability, it offers high power dissipation up to 20W in a compact rectangular shape.