Onsemi - 2SB1204S-E

  1. Home
  2. Onsemi - 2SB1204S-E
2SB1204S-E by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number 2SB1204S-E
Description PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): 8 A; No. of Elements: 1;
Datasheet 2SB1204S-E Datasheet
In Stock1,494
NAME DESCRIPTION
Maximum Collector Current (IC): 8 A
Maximum Power Dissipation (Abs): 20 W
Configuration: SINGLE
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Sub-Category: Other Transistors
Polarity or Channel Type: PNP
Surface Mount: NO
Minimum DC Current Gain (hFE): 140
Terminal Finish: TIN BISMUTH
JESD-609 Code: e6
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,494 $0.368 $549.792

Popular Products

Category Top Products

MMBT3906LT1G by Onsemi

MMBT3906LT1G

Onsemi

MMBT3906LT1G by Onsemi is a PNP BJT with VCEsat of 0.4V, hFE of 30, and fT of 250MHz. Ideal for small signal applications in electronics due to its low power dissipation, high transition frequency, and compact SOT-23 package. Suitable for use in temperature-sensitive environments with an operating range from -65°C to 150°C.
MMBT3906 by Rectron

MMBT3906

Rectron

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; JESD-30 Code: R-PDSO-G3; Maximum Turn On Time (ton): 70 ns;
2N3906 by Micro Commercial Components

2N3906

Micro Commercial Components

Small Signal Bipolar Transistors; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .2 A; Maximum Collector-Emitter Voltage: 40 V;
2N2219A by Fairchild Semiconductor

2N2219A

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .8 A;
2N2907A by Vishay Intertechnology

2N2907A

Vishay Intertechnology

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; JESD-30 Code: O-MBCY-W3; JEDEC-95 Code: TO-18;
BC847C by Changzhou Galaxy Century Microelectronics

BC847C

Changzhou Galaxy Century Microelectronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
BC846B by Weitronic Enterprise

BC846B

Weitronic Enterprise

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
BC547C by Crimson Semiconductor

BC547C

Crimson Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
MMBT2907AT-7-F by Diodes Incorporated

MMBT2907AT-7-F

Diodes Incorporated

MMBT2907AT-7-F by Diodes Inc. is a PNP small signal BJT transistor with a max collector-emitter voltage of 60V and a max collector current of 0.6A. It is commonly used in applications requiring high-speed switching and amplification, such as audio amplifiers and digital circuits.
2N3904 by Surge Components

2N3904

Surge Components

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Transistor Application: SWITCHING;
JANTX2N2222A by Microchip Technology

JANTX2N2222A

Microchip Technology

JANTX2N2222A by Microchip Tech is a NPN BJT transistor with hFE of 30, VCE of 50V, and IC of 0.8A. Ideal for switching applications due to fast ton of 35ns and toff of 300ns. Operates in temp range -65°C to 200°C, complies with MIL-19500/255 standard.
MMBT3906 by Fairchild Semiconductor

MMBT3906

Fairchild Semiconductor

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .2 A;
2N3906 by ROHM

2N3906

ROHM

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
BC817-40 by Continental Device India

BC817-40

Continental Device India

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .5 A;
2N3904 by Minilogic Device

2N3904

Minilogic Device

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .2 A; JESD-609 Code: e0;
2N2905A by Baneasa S A

2N2905A

Baneasa S A

Small Signal Bipolar Transistors; Configuration: SINGLE; Surface Mount: NO; Terminal Form: WIRE; Qualification: Not Qualified; Transistor Element Material: SILICON;
2N3906 by Vishay Sprague

2N3906

Vishay Sprague

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Terminal Position: BOTTOM; Package Style (Meter): CYLINDRICAL;
SMBTA06E6327HTSA1 by Infineon Technologies

SMBTA06E6327HTSA1

Infineon Technologies

Infineon Technologies' SMBTA06E6327HTSA1 is a NPN BJT transistor with hFE of 100, VCE of 80V, and IC of 0.5A. Ideal for amplifier applications, it operates up to 150°C with a transition frequency of 100MHz. This surface-mount device in a small outline package suits compact designs.
BC817-25 by Changzhou Galaxy Century Microelectronics

BC817-25

Changzhou Galaxy Century Microelectronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 170 MHz; Maximum Collector Current (IC): .5 A; No. of Terminals: 3;
2N2222A by Hi-tron Semiconductor

2N2222A

Hi-tron Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;