Onsemi - 2SB1214TP-FA

  1. Home
  2. Onsemi - 2SB1214TP-FA
2SB1214TP-FA by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number 2SB1214TP-FA
Description PNP; Configuration: DARLINGTON; Surface Mount: YES; Maximum Power Dissipation (Abs): 15 W; Maximum Collector Current (IC): 3 A; Maximum Operating Temperature: 150 Cel;
Datasheet 2SB1214TP-FA Datasheet
In Stock1,513
NAME DESCRIPTION
Maximum Collector Current (IC): 3 A
Maximum Power Dissipation (Abs): 15 W
Configuration: DARLINGTON
Maximum Operating Temperature: 150 Cel
Sub-Category: Other Transistors
Polarity or Channel Type: PNP
Surface Mount: YES
Minimum DC Current Gain (hFE): 1000
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,513 - -

Popular Products

Category Top Products

MJE3055T by Iskra Semic Capacitors Industry

MJE3055T

Iskra Semic Capacitors Industry

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2 MHz; Maximum Power Dissipation (Abs): 75 W; Maximum Collector Current (IC): 10 A;
TIP35C by Silicon Group

TIP35C

Silicon Group

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 25 A;
TIP112 by Intersil

TIP112

Intersil

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 4 A; Terminal Finish: Tin/Lead (Sn/Pb);
MMBT4401 by Samsung

MMBT4401

Samsung

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .6 A;
MMBT2907ALT1 by Jiangsu Changjiang Electronics Technology

MMBT2907ALT1

Jiangsu Changjiang Electronics Technology

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .6 A;
BC817-25 by Vishay Intertechnology

BC817-25

Vishay Intertechnology

Vishay Intertechnology's BC817-25 NPN transistor offers a max power dissipation of 0.33W, min DC current gain of 160, and max collector current of 0.5A. Ideal for surface mount applications in electronics where a single NPN configuration is required, with an operating temperature up to 150°C.
BC327-25 by Tt Electronics Plc

BC327-25

Tt Electronics Plc

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .8 A; Minimum DC Current Gain (hFE): 160;
TIP117 by Mospec Semiconductor

TIP117

Mospec Semiconductor

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 4 A; Maximum Operating Temperature: 150 Cel;
TIP32C by Unisonic Technologies

TIP32C

Unisonic Technologies

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 3 A;
BC857B by Philips Semiconductors

BC857B

Philips Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
BC857C by Secos

BC857C

Secos

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
MMBT3904 by Samsung

MMBT3904

Samsung

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .2 A;
TIP42C by Thomson-csf Compsants Specific

TIP42C

Thomson-csf Compsants Specific

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
BDW93C by Texas Instruments

BDW93C

Texas Instruments

Texas Instruments' BDW93C NPN Darlington transistor offers 80W power dissipation, 750 min hFE, and 12A max collector current. Ideal for high-power applications in environments up to 150°C.
MMBT5551 by Unisonic Technologies

MMBT5551

Unisonic Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .6 A;
2N2222A by Comset Semiconductors

2N2222A

Comset Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
PMBT2222A by North American Philips Discrete Products Div

PMBT2222A

North American Philips Discrete Products Div

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .6 A;
TIP122 by North American Philips Discrete Products Div

TIP122

North American Philips Discrete Products Div

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Maximum Operating Temperature: 150 Cel;
TIP110 by General Electric Solid State

TIP110

General Electric Solid State

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Maximum Operating Temperature: 150 Cel;
MMBTA92 by Samsung

MMBTA92

Samsung

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .5 A;