Onsemi - 2SB1215S-E

  1. Home
  2. Onsemi - 2SB1215S-E
2SB1215S-E by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number 2SB1215S-E
Description PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): 3 A; JESD-609 Code: e6;
Datasheet 2SB1215S-E Datasheet
In Stock1,229
NAME DESCRIPTION
Maximum Collector Current (IC): 3 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE
Sub-Category: Other Transistors
Polarity or Channel Type: PNP
Surface Mount: NO
Minimum DC Current Gain (hFE): 140
Terminal Finish: Tin/Bismuth (Sn/Bi)
JESD-609 Code: e6
Maximum Power Dissipation (Abs): 20 W
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Peak Reflow Temperature (C): NOT SPECIFIED
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,229 $0.405 $497.745

Popular Products

Category Top Products

2N2222A by Asi Semiconductor

2N2222A

Asi Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
BC817-25 by ROHM

BC817-25

ROHM

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .8 A;
2N2222A by NXP Semiconductors

2N2222A

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; Maximum Operating Temperature: 150 Cel;
BC817-40 by Philips Components

BC817-40

Philips Components

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; No. of Elements: 1;
2N2905A by Taitron Components

2N2905A

Taitron Components

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; Minimum DC Current Gain (hFE): 100;
MMBT2222A,215 by Nexperia

MMBT2222A,215

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .6 A; Qualification: Not Qualified;
BC846BPN,115 by Nexperia

BC846BPN,115

Nexperia

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
BC807-25,215 by NXP Semiconductors

BC807-25,215

NXP Semiconductors

BC807-25,215 by NXP Semiconductors is a PNP BJT transistor for switching applications. It has a VCEsat of 0.7V, hFE of 160, and IC of 0.5A. With a max operating temperature of 150°C, it is ideal for small outline packages in surface mount configurations.
2N6517BU by Fairchild Semiconductor

2N6517BU

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 40 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .5 A;
PMBT2222A,215 by Nexperia

PMBT2222A,215

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .6 A; Maximum Operating Temperature: 150 Cel;
BC547C by Motorola

BC547C

Motorola

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
2N2222A by New England Semiconductor

2N2222A

New England Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
BC847B by Promax-johnton

BC847B

Promax-johnton

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .1 A; Qualification: Not Qualified; Transistor Application: AMPLIFIER;
MMBT3906 by Fairchild Semiconductor

MMBT3906

Fairchild Semiconductor

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .2 A;
2N2219A by Cobham Plc

2N2219A

Cobham Plc

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Package Body Material: METAL; No. of Terminals: 3;
MMBT2907A by General Semiconductor

MMBT2907A

General Semiconductor

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; No. of Elements: 1;
ULN2003AIDR by Texas Instruments

ULN2003AIDR

Texas Instruments

ULN2003AIDR by Texas Instruments is a NPN BJT transistor with 7 elements and 16 terminals. It has a max collector-emitter voltage of 50V and max collector current of 0.5A, suitable for switching applications in surface mount designs. The package is rectangular with gull wing terminals, ideal for small outline configurations.
MMBT4401LT1G by Onsemi

MMBT4401LT1G

Onsemi

MMBT4401LT1G by Onsemi is a NPN BJT transistor for switching applications. With a VCEsat of 0.75V, hFE of 40, and IC of 0.6A, it operates at temperatures from -55 to 150°C. Its small outline package with gull wing terminals makes it suitable for surface mount designs.
JANTX2N2907AUATR by Microsemi

JANTX2N2907AUATR

Microsemi

Small Signal Bipolar Transistors;
BC847B by Kodenshi Auk

BC847B

Kodenshi Auk

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;