2SB1216T-E by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	2SB1216T-E
Description	PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 130 MHz; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): 4 A;
Datasheet	2SB1216T-E Datasheet
In Stock	1,285

NAME	DESCRIPTION
Nominal Transition Frequency (fT):	130 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	4 A
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
JEDEC-95 Code:	TO-251
Sub-Category:	Other Transistors
Polarity or Channel Type:	PNP
Surface Mount:	NO
Minimum DC Current Gain (hFE):	200
Terminal Finish:	TIN BISMUTH
JESD-609 Code:	e6
No. of Terminals:	3
Maximum Power Dissipation (Abs):	20 W
Maximum Collector-Emitter Voltage:	100 V
Terminal Position:	SINGLE
Package Style (Meter):	IN-LINE
JESD-30 Code:	R-PSIP-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Maximum Operating Temperature:	150 Cel
Case Connection:	COLLECTOR

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,285	$0.262	$336.670

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RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

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RECTIFIER DIODE; Surface Mount: NO; No. of Phases: 1; Maximum Operating Temperature: 200 Cel; Config: SINGLE; No. of Elements: 1;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

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