2SB1216T-TL-H by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	2SB1216T-TL-H
Description	PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 130 MHz; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): 4 A;
Datasheet	2SB1216T-TL-H Datasheet
In Stock	2,154

NAME	DESCRIPTION
Nominal Transition Frequency (fT):	130 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	4 A
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
Sub-Category:	Other Transistors
Surface Mount:	YES
Terminal Finish:	TIN BISMUTH
No. of Terminals:	2
Maximum Power Dissipation (Abs):	20 W
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Maximum Operating Temperature:	150 Cel
Case Connection:	COLLECTOR
Moisture Sensitivity Level (MSL):	1
JEDEC-95 Code:	TO-252
Polarity or Channel Type:	PNP
Minimum DC Current Gain (hFE):	200
JESD-609 Code:	e6
Maximum Collector-Emitter Voltage:	100 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
2,154	$0.301	$648.354

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