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| Manufacturer | Onsemi |
|---|---|
| Manufacturer's Part Number | 2SB1223 |
| Description | PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 20 MHz; Maximum Collector Current (IC): 4 A; Maximum Collector-Emitter Voltage: 60 V; |
| Datasheet | 2SB1223 Datasheet |
| In Stock | 643 |
| NAME | DESCRIPTION |
|---|---|
| Nominal Transition Frequency (fT): | 20 MHz |
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Collector Current (IC): | 4 A |
| Configuration: | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
| Transistor Element Material: | SILICON |
| Transistor Application: | SWITCHING |
| Polarity or Channel Type: | PNP |
| Surface Mount: | NO |
| Minimum DC Current Gain (hFE): | 2000 |
| Terminal Finish: | Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni) |
| No. of Terminals: | 3 |
| Qualification: | Not Qualified |
| Maximum Collector-Emitter Voltage: | 60 V |
| Terminal Position: | SINGLE |
| Package Style (Meter): | FLANGE MOUNT |
| JESD-30 Code: | R-PSFM-T3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | THROUGH-HOLE |
| Additional Features: | BUILT IN BIAS RESISTOR RATIO IS 0.03 |
| Case Connection: | ISOLATED |
