2SB1229T-AA by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	2SB1229T-AA
Description	PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .75 W; Maximum Collector Current (IC): 2 A;
Datasheet	2SB1229T-AA Datasheet
In Stock	169

NAME	DESCRIPTION
Nominal Transition Frequency (fT):	150 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	2 A
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
Polarity or Channel Type:	PNP
Surface Mount:	NO
Minimum DC Current Gain (hFE):	200
Terminal Finish:	Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
No. of Terminals:	3
Maximum Power Dissipation (Abs):	.75 W
Maximum Collector-Emitter Voltage:	50 V
Terminal Position:	BOTTOM
Package Style (Meter):	CYLINDRICAL
JESD-30 Code:	O-PBCY-T3
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	THROUGH-HOLE
Maximum Operating Temperature:	150 Cel
Maximum Collector-Base Capacitance:	22 pF
Maximum VCEsat:	.7 V
Maximum Power Dissipation Ambient:	.75 W

Pricing (USD)

Qty.	Unit Price	Ext. Price
169	$0.130	$21.970

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NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;