Onsemi - 2SB1325

  1. Home
  2. Onsemi - 2SB1325
2SB1325 by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number 2SB1325
Description PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): 4 A; Transistor Element Material: SILICON;
Datasheet 2SB1325 Datasheet
In Stock163
NAME DESCRIPTION
Maximum Collector Current (IC): 4 A
Maximum Power Dissipation (Abs): 1.5 W
Transistor Element Material: SILICON
Sub-Category: BIP General Purpose Small Signal
Polarity or Channel Type: PNP
Surface Mount: YES
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
163 - -

Popular Products

Category Top Products

2N2907AUB by Semicoa

2N2907AUB

Semicoa

PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A; Maximum Turn Off Time (toff): 300 ns;
2N3906 by Minilogic Device

2N3906

Minilogic Device

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .2 A; JESD-609 Code: e0;
BC847BVN-7 by Diodes Incorporated

BC847BVN-7

Diodes Incorporated

BC847BVN-7 by Diodes Inc. is a small signal BJT with NPN and PNP polarity, featuring separate 2-element configuration. With a max power dissipation of 0.15W, it operates at up to 150°C and has a max collector-emitter voltage of 45V. Ideal for applications requiring high DC current gain and transition frequency up to 300MHz in compact designs.
JANTX2N2222AUB by Vpt Components

JANTX2N2222AUB

Vpt Components

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .8 A; Maximum Turn On Time (ton): 35 ns;
BC817-40 by SPC TECHNOLOGY/ MULTICOMP

BC817-40

SPC TECHNOLOGY/ MULTICOMP

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 170 MHz; Maximum Collector Current (IC): .5 A; Terminal Position: DUAL;
BC547C by National Semiconductor

BC547C

National Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
MMBT2907AWT1G by Onsemi

MMBT2907AWT1G

Onsemi

MMBT2907AWT1G by Onsemi is a PNP BJT transistor with 3 terminals, max. power dissipation of 0.15W, and max. collector-emitter voltage of 60V. Ideal for amplifier applications, it has a min. DC current gain of 50 and operates at up to 150°C, making it suitable for various electronic circuits.
BC817-25 by Philips Semiconductors

BC817-25

Philips Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Peak Reflow Temperature (C): 260; Maximum Operating Temperature: 150 Cel; No. of Elements: 1;
SBC846BDW1T1G by Onsemi

SBC846BDW1T1G

Onsemi

SBC846BDW1T1G by Onsemi is a NPN BJT with 2 elements, ideal for amplifier applications. It has a max collector-emitter voltage of 65V, min DC current gain of 200 (hFE), and operates up to 150°C. This small outline transistor features a max power dissipation of 0.38W in a rectangular package with Gull Wing terminals.
2N3904TA by Onsemi

2N3904TA

Onsemi

2N3904TA by Onsemi is a NPN BJT transistor with max. power dissipation of 0.35W, hFE of 30, and max. collector-emitter voltage of 40V. Ideal for switching applications due to its fast turn on/off times (ton: 70ns, toff: 250ns) and high transition frequency (fT: 300MHz).
BC847B by Dc Components

BC847B

Dc Components

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .1 A;
BC817-25 by Infineon Technologies

BC817-25

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 170 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .5 A;
BC847BLT1G by Onsemi

BC847BLT1G

Onsemi

BC847BLT1G by Onsemi is a NPN BJT transistor for switching applications. It has VCEsat of 0.6V, hFE of 200, and fT of 100MHz. With max ratings of 45V VCEO and 0.1A IC, it operates b/w -55 to 150°C.
BC547C by Microchip Technology

BC547C

Microchip Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .1 A; Maximum Collector-Emitter Voltage: 45 V; Qualification: Not Qualified;
MMBT3904TT1G by Onsemi

MMBT3904TT1G

Onsemi

MMBT3904TT1G by Onsemi is a NPN BJT transistor with 3 terminals, hFE of 30, and max. power dissipation of 0.15W. Ideal for amplifier applications, it has a max. collector-emitter voltage of 40V and operates up to 150°C. With a transition frequency of 300MHz, it offers fast turn-on/off times for efficient performance in small outline packages.
MMBT2222ALT1 by Db Lectro

MMBT2222ALT1

Db Lectro

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .6 A;
BC847C by Taitron Components

BC847C

Taitron Components

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Maximum Collector-Emitter Voltage: 45 V;
BC847BLT3G by Onsemi

BC847BLT3G

Onsemi

BC847BLT3G by Onsemi is a small signal NPN bipolar junction transistor with a max collector-emitter voltage of 45V and a min DC current gain of 200. It is commonly used in applications such as amplifiers, switches, and general-purpose circuits.
2N2905A by Hi-tron Semiconductor

2N2905A

Hi-tron Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): .6 A;
MMBT2222A by Zowie Technology

MMBT2222A

Zowie Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .6 A;