Onsemi - 2SB598G

  1. Home
  2. Onsemi - 2SB598G
2SB598G by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number 2SB598G
Description PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): 1 A; Minimum DC Current Gain (hFE): 280;
Datasheet 2SB598G Datasheet
In Stock926
NAME DESCRIPTION
Maximum Collector Current (IC): 1 A
Maximum Power Dissipation (Abs): .6 W
Configuration: SINGLE
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Sub-Category: Other Transistors
Polarity or Channel Type: PNP
Surface Mount: NO
Minimum DC Current Gain (hFE): 280
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
926 - -

Popular Products

Category Top Products

TIP122 by Silicon Group

TIP122

Silicon Group

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Maximum Operating Temperature: 150 Cel;
FDV302P-NB8V001 by Fairchild Semiconductor

FDV302P-NB8V001

Fairchild Semiconductor

FDV302P-NB8V001 by Fairchild Semiconductor is a P-CHANNEL FET with 0.12A max drain current and 0.35W max power dissipation. It operates in enhancement mode, suitable for surface mount applications up to 150°C. Ideal for low-power circuit designs requiring single configuration transistors.
TIP31C by General Electric Solid State

TIP31C

General Electric Solid State

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 3 A;
TIP47 by Thomson Consumer Electronics

TIP47

Thomson Consumer Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 5 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 1 A;
MMBT4401 by Samsung

MMBT4401

Samsung

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .6 A;
BDX53C by Texas Instruments

BDX53C

Texas Instruments

BDX53C by Texas Instruments is an NPN Darlington transistor with 60W power dissipation, 750 min hFE, and 8A collector current. It operates up to 150°C and has a transition frequency of 20MHz. Ideal for high-power applications in various electronic circuits.
BC847 by Plessey Semiconductors Discrete Components Div

BC847

Plessey Semiconductors Discrete Components Div

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
BC817-25 by North American Philips Discrete Products Div

BC817-25

North American Philips Discrete Products Div

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .5 A; Terminal Finish: Tin/Lead (Sn/Pb);
BC337-40 by Philips Semiconductors

BC337-40

Philips Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .8 A; No. of Elements: 1;
2N3055 by Artesyn Technologies

2N3055

Artesyn Technologies

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): .01 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;
BD139 by Toshiba

BD139

Toshiba

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;
2N2222AUB by Crystalonics

2N2222AUB

Crystalonics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
TIP111 by Intersil

TIP111

Intersil

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 4 A; Minimum DC Current Gain (hFE): 500;
TIP29C by Harris Semiconductor

TIP29C

Harris Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 1 A;
TIP50 by Iskra Semic Capacitors Industry

TIP50

Iskra Semic Capacitors Industry

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 5 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 1 A;
TIP112 by North American Philips Discrete Products Div

TIP112

North American Philips Discrete Products Div

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 4 A; Maximum Operating Temperature: 150 Cel;
TIP32C by Iskra Semic Capacitors Industry

TIP32C

Iskra Semic Capacitors Industry

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 3 A;
TIP32C by Toshiba

TIP32C

Toshiba

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 3 A;
BD139 by Tesla Elektronicke Soucastky

BD139

Tesla Elektronicke Soucastky

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;
BC546B by Texas Instruments

BC546B

Texas Instruments

BC546B by Texas Instruments is an NPN transistor with a max power dissipation of 0.625W and min DC current gain of 200. It operates at up to 150°C, handles a max collector current of 0.1A, and has a transition frequency of 150MHz. Ideal for low-power applications in electronics circuits.