Onsemi - 2SC3116S

  1. Home
  2. Onsemi - 2SC3116S
2SC3116S by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number 2SC3116S
Description NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 120 MHz; Maximum Power Dissipation (Abs): 10 W; Maximum Collector Current (IC): .7 A;
Datasheet 2SC3116S Datasheet
In Stock2,271
NAME DESCRIPTION
Nominal Transition Frequency (fT): 120 MHz
Maximum Collector Current (IC): .7 A
Maximum Power Dissipation (Abs): 10 W
Configuration: SINGLE
No. of Elements: 1
Maximum Operating Temperature: 135 Cel
Sub-Category: Other Transistors
Polarity or Channel Type: NPN
Surface Mount: NO
Minimum DC Current Gain (hFE): 140
Terminal Finish: Tin/Silver/Copper/Nickel (Sn/Ag/Cu/Ni)
JESD-609 Code: e2
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
2,271 $0.198 $449.658

Popular Products

Category Top Products

TIP115 by General Electric Solid State

TIP115

General Electric Solid State

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 4 A; Minimum DC Current Gain (hFE): 500;
2N3904 by Semiconductors

2N3904

Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
PMBT2222A by Philips Semiconductors

PMBT2222A

Philips Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .6 A;
2N3055 by Intersil

2N3055

Intersil

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;
ZTX653 by Plessey Semiconductors Discrete Components Div

ZTX653

Plessey Semiconductors Discrete Components Div

Other Transistors;
BC847 by ROHM

BC847

ROHM

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
TIP42C by Bharat Electronics

TIP42C

Bharat Electronics

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
2N3019 by Semiconductors

2N3019

Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): 1 A;
2N2219A by Philips Semiconductors

2N2219A

Philips Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .8 A;
ZTX651 by Plessey Semiconductors Discrete Components Div

ZTX651

Plessey Semiconductors Discrete Components Div

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 140 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 2 A;
PMF170XP,115 by NXP Semiconductors

PMF170XP,115

NXP Semiconductors

NXP Semiconductors PMF170XP,115 is a P-CHANNEL FET with 1A max drain current and 0.36W power dissipation. Ideal for surface mount applications, it operates in enhancement mode up to 150°C. Suitable for various electronic devices requiring efficient power management.
TIP125 by Philips Semiconductors

TIP125

Philips Semiconductors

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Maximum Operating Temperature: 150 Cel;
TIP32C by Harris Semiconductor

TIP32C

Harris Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 3 A;
3001 by Asi Semiconductor

3001

Asi Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 5 W; Maximum Collector Current (IC): .25 A; Maximum Operating Temperature: 175 Cel;
TIP111 by Jiangsu Changjiang Electronics Technology

TIP111

Jiangsu Changjiang Electronics Technology

TIP111 by Jiangsu Changjiang Electronics Technology is an NPN Darlington transistor with a max power dissipation of 50W, min DC current gain of 500, and max collector current of 4A. It is commonly used in various applications requiring high power amplification and switching capabilities.
TIP120 by Comset Semiconductors

TIP120

Comset Semiconductors

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Minimum DC Current Gain (hFE): 1000;
2N2219A by Semiconductors

2N2219A

Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .8 A;
BC337-40 by Shanghai Lunsure Electronic Technology

BC337-40

Shanghai Lunsure Electronic Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .8 A; No. of Elements: 1;
BC548C by Unisonic Technologies

BC548C

Unisonic Technologies

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .1 A; Maximum Operating Temperature: 150 Cel;
BC557B by Philips Semiconductors

BC557B

Philips Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A; JESD-609 Code: e3;