Onsemi - 2SC3503DSTU

  1. Home
  2. Onsemi - 2SC3503DSTU
2SC3503DSTU by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number 2SC3503DSTU
Description NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Collector Current (IC): .1 A; Transistor Application: AMPLIFIER;
Datasheet 2SC3503DSTU Datasheet
In Stock1,178
NAME DESCRIPTION
Nominal Transition Frequency (fT): 150 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .1 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
JEDEC-95 Code: TO-126
Polarity or Channel Type: NPN
Surface Mount: NO
Minimum DC Current Gain (hFE): 60
No. of Terminals: 3
Maximum Collector-Emitter Voltage: 300 V
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,178 - -

Popular Products

Category Top Products

BC847,215 by NXP Semiconductors

BC847,215

NXP Semiconductors

NXP Semiconductors' BC847,215 is a NPN BJT transistor with VCEsat of 0.6V, hFE of 110, and IC of 0.1A. Ideal for switching applications in small outline packages with 3 terminals. Operates at max temp of 150°C and has a transition frequency of 100MHz.
2N2905A by Texas Instruments

2N2905A

Texas Instruments

2N2905A by Texas Instruments is a PNP BJT transistor with max. power dissipation of 0.6W, hFE of 100, and max. collector-emitter voltage of 60V. Ideal for switching applications due to its fast turn-on/off times (45ns/100ns) and high transition frequency (200MHz).
BC847C by Siemens

BC847C

Siemens

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
MMBT2222A by Panjit International

MMBT2222A

Panjit International

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .6 A; Terminal Finish: TIN; No. of Elements: 1;
2N3904 by Allegro MicroSystems

2N3904

Allegro MicroSystems

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
2N3904TFR by Onsemi

2N3904TFR

Onsemi

2N3904TFR by Onsemi is a NPN BJT transistor with max. power dissipation of 0.35W, hFE of 30, and fT of 300MHz. Ideal for switching applications due to its max. collector-emitter voltage of 40V and max. collector current of 0.2A. Operates in temp range -55 to 150°C, with turn on time of 70ns and turn off time of 250ns.
MMBT2222AM3T5G by Onsemi

MMBT2222AM3T5G

Onsemi

MMBT2222AM3T5G by Onsemi is a NPN BJT transistor with 40V VCEO, 0.6A IC, and 300MHz fT. Ideal for amplifier applications, it comes in a small outline package with matte tin finish and operates up to 150°C.
BC817-25 by Weitronic Enterprise

BC817-25

Weitronic Enterprise

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .5 A;
BC856B,215 by NXP Semiconductors

BC856B,215

NXP Semiconductors

BC856B,215 by NXP Semiconductors is a PNP BJT transistor for switching applications. It has a max VCEsat of 0.65V and min hFE of 220. With a max operating temperature of 150°C, it is ideal for small outline surface mount designs.
2N3904 by Toshiba

2N3904

Toshiba

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
BC846BW,115 by NXP Semiconductors

BC846BW,115

NXP Semiconductors

BC846BW,115 by NXP Semiconductors is a small signal NPN bipolar junction transistor (BJT) with a max collector-emitter voltage of 65V and a max collector current of 0.1A. It is commonly used for switching applications due to its low VCEsat of 0.6V and high DC current gain (hFE) of 200.
2N2907A by Continental Device India

2N2907A

Continental Device India

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A;
2N3906 by Kec

2N3906

Kec

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
2N2219A by Digitron Semiconductors

2N2219A

Digitron Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): .8 A; JESD-30 Code: O-MBCY-T3;
BC817-40 by Formosa Microsemi

BC817-40

Formosa Microsemi

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .5 A;
MMBT3904WT1G by Onsemi

MMBT3904WT1G

Onsemi

MMBT3904WT1G by Onsemi is a NPN BJT transistor with 40V VCEO, 0.2A IC, and 300MHz fT. Ideal for amplifier applications, it has a small outline package and operates b/w -55°C to 150°C. With a DC current gain of at least 30, this transistor offers fast switching times for efficient performance.
BC846BPDW1T1G by Onsemi

BC846BPDW1T1G

Onsemi

BC846BPDW1T1G by Onsemi is a Small Signal BJT with NPN and PNP types. It has a max VCEsat of 0.65V, hFE of 200, and fT of 100MHz. Ideal for amplifier applications due to its small outline package style and dual terminal position for surface mount assembly.
BC817,215 by Nexperia

BC817,215

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; Maximum Time At Peak Reflow Temperature (s): 30;
2N3904 by Hi-tron Semiconductor

2N3904

Hi-tron Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
MMBT2222A by STMicroelectronics

MMBT2222A

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 270 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .6 A;