Onsemi - 2SC4491

  1. Home
  2. Onsemi - 2SC4491
2SC4491 by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number 2SC4491
Description NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 1.2 A; Package Shape: RECTANGULAR; Terminal Form: THROUGH-HOLE;
Datasheet 2SC4491 Datasheet
In Stock1,429
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 1.2 A
Configuration: DARLINGTON WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Polarity or Channel Type: NPN
Surface Mount: NO
Minimum DC Current Gain (hFE): 1000
Terminal Finish: Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
No. of Terminals: 3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 50 V
Terminal Position: SINGLE
Package Style (Meter): IN-LINE
JESD-30 Code: R-PSIP-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,429 - -

Popular Products

Category Top Products

MMBT2222A by Vishay Semiconductors

MMBT2222A

Vishay Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .6 A; Minimum DC Current Gain (hFE): 75;
2N2222AUB by Central Semiconductor

2N2222AUB

Central Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
MMBT3906 by Comchip Technology

MMBT3906

Comchip Technology

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .2 A; Terminal Position: DUAL;
BC547C by Microchip Technology

BC547C

Microchip Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .1 A; Maximum Collector-Emitter Voltage: 45 V; Qualification: Not Qualified;
2N2907A by Semicoa

2N2907A

Semicoa

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A;
BC547B by Secos

BC547B

Secos

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Collector Current (IC): .1 A; No. of Elements: 1;
2N3906 by Diotec Semiconductor Ag

2N3906

Diotec Semiconductor Ag

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .2 A; Maximum Collector-Emitter Voltage: 40 V;
BC847-C by Samsung

BC847-C

Samsung

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .1 A; No. of Terminals: 3;
MMBT2222AWT3G by Onsemi

MMBT2222AWT3G

Onsemi

MMBT2222AWT3G by Onsemi is a small signal NPN transistor with a max collector-emitter voltage of 40V and a max collector current of 0.6A. It is commonly used as an amplifier in various applications.
2N2222AUA by Aeroflex/metelics

2N2222AUA

Aeroflex/metelics

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .8 A; Transistor Application: SWITCHING; Terminal Form: NO LEAD;
2N2222A by Crimson Semiconductor

2N2222A

Crimson Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
MMBT3906-TP by Micro Commercial Components

MMBT3906-TP

Micro Commercial Components

MMBT3906-TP by Micro Commercial Components is a PNP BJT transistor with hFE of 100. It has a max power dissipation of 0.3W and operates up to 150°C. Ideal for amplifier applications, this SMD transistor offers a transition frequency of 250MHz in a small outline package.
2N3904 by NXP Semiconductors

2N3904

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .2 A;
2N2219A by Nte Electronics

2N2219A

Nte Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .8 A;
2N3904 by Kec

2N3904

Kec

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
MMBT3906 by National Semiconductor

MMBT3906

National Semiconductor

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .2 A;
BC846B,235 by Nexperia

BC846B,235

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; No. of Terminals: 3;
MMBT2907A by Changzhou Galaxy Century Microelectronics

MMBT2907A

Changzhou Galaxy Century Microelectronics

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; Transistor Element Material: SILICON;
SMMBTA06LT1G by Onsemi

SMMBTA06LT1G

Onsemi

SMMBTA06LT1G by Onsemi is a NPN BJT transistor with 3 terminals, suitable for amplifier applications. It has a max collector-emitter voltage of 80V and can handle a max collector current of 0.5A. With a min DC current gain of 100, it operates at temperatures up to 150°C.
BC547C by Motorola

BC547C

Motorola

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;