Onsemi - 2SC5231A-8-TL-E

  1. Home
  2. Onsemi - 2SC5231A-8-TL-E
2SC5231A-8-TL-E by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number 2SC5231A-8-TL-E
Description RF Small Signal Bipolar Transistors; JESD-609 Code: e6; Moisture Sensitivity Level (MSL): 1; Terminal Finish: TIN BISMUTH;
Datasheet 2SC5231A-8-TL-E Datasheet
In Stock1,660
NAME DESCRIPTION
Terminal Finish: TIN BISMUTH
JESD-609 Code: e6
Moisture Sensitivity Level (MSL): 1
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,660 $0.163 $270.580

Popular Products

Category Top Products

KSP10BU by Onsemi

KSP10BU

Onsemi

The Onsemi KSP10BU is an NPN RF BJT with a max fT of 650 MHz and hFE of 60. It operates at up to 150°C, has VCEO of 25V, and CCB of 0.7pF. Commonly used in ultra-high frequency applications due to its high transition frequency and low collector-base capacitance.
BFP520FH6327XTSA1 by Infineon Technologies

BFP520FH6327XTSA1

Infineon Technologies

Infineon's BFP520FH6327XTSA1 is a NPN RF BJT transistor with 4 terminals, suitable for KU band applications. It has a max fT of 45 GHz, VCE of 2.5V, and IC of 0.04A. Ideal for amplifier circuits in automotive electronics due to AEC-Q101 compliance.
HFA3102BZ96 by Intersil

HFA3102BZ96

Intersil

NPN; Configuration: COMPLEX; Surface Mount: YES; Nominal Transition Frequency (fT): 10000 MHz; Maximum Collector Current (IC): .03 A; Maximum Time At Peak Reflow Temperature (s): 30;
KSC2223R by Onsemi

KSC2223R

Onsemi

KSC2223R by Onsemi is an NPN RF BJT transistor with a max VCEsat of 0.3V, ideal for amplifier applications in the VHF band. It has a min hFE of 40, operates up to 150 °C, and features a max IC of 0.02A in a small outline package with Gull Wing terminals.
MMBTH81LT1 by Onsemi

MMBTH81LT1

Onsemi

MMBTH81LT1 by Onsemi is a PNP RF small signal BJT with a max collector-emitter voltage of 20V and a nominal transition frequency of 600MHz. It is commonly used in applications requiring ultra high frequency band performance, such as wireless communication systems.
2N2222 by Swampscott Electronics

2N2222

Swampscott Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
BFY90 by Motorola

BFY90

Motorola

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1300 MHz; Maximum Collector Current (IC): .05 A; JEDEC-95 Code: TO-72;
BFR360FH6327XTSA1 by Infineon Technologies

BFR360FH6327XTSA1

Infineon Technologies

BFR360FH6327XTSA1 by Infineon Technologies is a NPN RF BJT transistor with a max fT of 14GHz. It is designed for amplifier applications in the S Band frequency range. This small outline package has a max operating temp of 150°C and collector-emitter voltage of 6V, making it suitable for high-frequency amplification needs.
BFR93ARGELB-GS08 by Vishay Semiconductors

BFR93ARGELB-GS08

Vishay Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6000 MHz; Maximum Collector Current (IC): .05 A; Package Style (Meter): SMALL OUTLINE;
934067695135 by NXP Semiconductors

934067695135

NXP Semiconductors

RF Small Signal Bipolar Transistors; Peak Reflow Temperature (C): 260; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1; Terminal Finish: TIN; Maximum Time At Peak Reflow Temperature (s): 30;
934047470115 by NXP Semiconductors

934047470115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Collector Current (IC): .03 A; Terminal Position: DUAL;
MPSH11RL by Onsemi

MPSH11RL

Onsemi

MPSH11RL by Onsemi is an NPN RF BJT with a max. collector-emitter voltage of 25V and fT of 650MHz. It is used in ultra-high frequency applications due to its low capacitance (0.7pF) and high temp. tolerance (150 °C). The transistor, in a cylindrical package, has 3 terminals and silicon element material for optimal performance.
2N2222 by General Diode

2N2222

General Diode

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
MSD2714AT1G by Onsemi

MSD2714AT1G

Onsemi

The Onsemi MSD2714AT1G is an NPN RF BJT with a max collector-emitter voltage of 25V and fT of 650MHz. It is ideal for UHF applications due to its small outline package and high transition frequency. With a DC current gain of 90, it offers efficient performance in ultra-high frequency band circuits.
MPSH17G by Onsemi

MPSH17G

Onsemi

The Onsemi MPSH17G is an NPN RF BJT transistor with a max fT of 800 MHz. It has a max Vce of 15V and Pd of 0.625W, suitable for amplifier applications in the very high frequency band. The package is cylindrical with through-hole terminals, ideal for high-speed circuit designs.
BFU520XRR by NXP Semiconductors

BFU520XRR

NXP Semiconductors

The NXP Semiconductors BFU520XRR is a RF BJT transistor with NPN polarity, ideal for amplifier applications in the L band. It has a max operating temperature of 150°C, fT of 10500 MHz, and can handle a collector-emitter voltage of 16V. This small outline transistor features gull wing terminals and is surface mountable.
2N3866 by Intersil

2N3866

Intersil

NPN; Nominal Transition Frequency (fT): 1000 MHz; No. of Elements: 1; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Qualification: Not Qualified; Transistor Element Material: SILICON;
LM3146N by Rochester Electronics

LM3146N

Rochester Electronics

NPN; Configuration: COMPLEX; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Collector Current (IC): .05 A; No. of Terminals: 14;
2N3643 by Semitronics

2N3643

Semitronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .5 A;
MCH4013-TL-E by Onsemi

MCH4013-TL-E

Onsemi

RF Small Signal Bipolar Transistors; JESD-609 Code: e6; Moisture Sensitivity Level (MSL): 1; Terminal Finish: Tin/Bismuth (Sn/Bi);