Onsemi - 2SC5566

  1. Home
  2. Onsemi - 2SC5566
2SC5566 by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number 2SC5566
Description NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.5 W; Maximum Collector Current (IC): 4 A; Maximum Operating Temperature: 150 Cel;
Datasheet 2SC5566 Datasheet
In Stock193
NAME DESCRIPTION
Maximum Collector Current (IC): 4 A
Maximum Power Dissipation (Abs): 3.5 W
Configuration: SINGLE
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Sub-Category: Other Transistors
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 200
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
193 - -

Popular Products

Category Top Products

TIP127 by Inchange Semiconductor

TIP127

Inchange Semiconductor

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Transistor Element Material: SILICON;
TIP3055 by STMicroelectronics

TIP3055

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 15 A;
TIP41C by Fairchild Semiconductor

TIP41C

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
TIP111 by Fairchild Semiconductor

TIP111

Fairchild Semiconductor

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Package Shape: RECTANGULAR;
TIP36C by Comset Semiconductors

TIP36C

Comset Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 25 A;
MJE350 by General Transistor

MJE350

General Transistor

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): .5 A; Minimum DC Current Gain (hFE): 30;
TIP127TU by Fairchild Semiconductor

TIP127TU

Fairchild Semiconductor

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; JESD-30 Code: R-PSFM-T3;
TIP29C by Nte Electronics

TIP29C

Nte Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 1 A;
BUX87 by STMicroelectronics

BUX87

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 20 MHz; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): .5 A;
BD140 by SPC TECHNOLOGY/ MULTICOMP

BD140

SPC TECHNOLOGY/ MULTICOMP

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 1.5 A; Package Body Material: PLASTIC/EPOXY; No. of Terminals: 3;
MJD117T4 by Motorola

MJD117T4

Motorola

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 25 MHz; Maximum Collector Current (IC): 2 A; Transistor Application: SWITCHING;
ULN2803A by Sanken Electric

ULN2803A

Sanken Electric

NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; JESD-30 Code: R-PDIP-T18; Package Body Material: PLASTIC/EPOXY;
ULN2802A by Motorola

ULN2802A

Motorola

NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Transistor Application: SWITCHING; Qualification: Not Qualified;
JANTX2N3055 by Defense Logistics Agency

JANTX2N3055

Defense Logistics Agency

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 15 A; Terminal Form: PIN/PEG; JESD-30 Code: O-MBFM-P2;
MJE340 by Continental Device India

MJE340

Continental Device India

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): .5 A;
MJE3055T by STMicroelectronics

MJE3055T

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2 MHz; Maximum Power Dissipation (Abs): 75 W; Maximum Collector Current (IC): 10 A;
2SC5200-O by Toshiba

2SC5200-O

Toshiba

Toshiba's 2SC5200-O is a NPN BJT transistor with max VCEsat of 3V, hFE of 80, and IC of 15A. Ideal for amplifier applications due to its max power dissipation of 150W and collector-emitter voltage of 230V. Suitable for high-power audio amplifiers or industrial equipment requiring robust performance in a rectangular package style.
MJE3055T by General Transistor

MJE3055T

General Transistor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2 MHz; Maximum Power Dissipation (Abs): 75 W; Maximum Collector Current (IC): 10 A;
JANTX2N3055 by Solitron Devices

JANTX2N3055

Solitron Devices

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;
BD679A by Comset Semiconductors

BD679A

Comset Semiconductors

NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): .06 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 4 A;