Onsemi - 2SC5899

  1. Home
  2. Onsemi - 2SC5899
2SC5899 by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number 2SC5899
Description NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 15 A; No. of Terminals: 3; Minimum DC Current Gain (hFE): 4;
Datasheet 2SC5899 Datasheet
In Stock1,477
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 15 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Polarity or Channel Type: NPN
Surface Mount: NO
Minimum DC Current Gain (hFE): 4
Terminal Finish: TIN SILVER COPPER NICKEL
JESD-609 Code: e2
No. of Terminals: 3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 800 V
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Additional Features: HIGH RELIABILITY
Case Connection: ISOLATED
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,477 - -

Popular Products

Category Top Products

BUV48A by Central Semiconductor

BUV48A

Central Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 15 A; JESD-609 Code: e0;
2SC5200 by New Jersey Semiconductor Products

2SC5200

New Jersey Semiconductor Products

NPN; Configuration: SINGLE; Nominal Transition Frequency (fT): 30 MHz; Maximum Collector Current (IC): 15 A; Transistor Element Material: SILICON; No. of Elements: 1;
TIP31C by Bourns

TIP31C

Bourns

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 3 A; Maximum Operating Temperature: 150 Cel;
ULN2803A by Onsemi

ULN2803A

Onsemi

NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Package Body Material: PLASTIC/EPOXY; Qualification: Not Qualified;
TIP42C by Changzhou Galaxy Century Microelectronics

TIP42C

Changzhou Galaxy Century Microelectronics

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 6 A; Package Style (Meter): FLANGE MOUNT;
BCX5316TA by Diodes Incorporated

BCX5316TA

Diodes Incorporated

BCX5316TA by Diodes Inc. is a PNP BJT transistor for switching applications. It has VCEsat of 0.5V, hFE of 100, and max IC of 1A. With a max operating temp of 150°C, it's ideal for power management in compact electronic devices.
MJD44H11T4-A by STMicroelectronics

MJD44H11T4-A

STMicroelectronics

STMicroelectronics' MJD44H11T4-A is an NPN BJT transistor with 80V VCE, 8A IC, and 20W Ptot. Ideal for switching applications, it comes in a small outline package with Gull Wing terminals and can operate up to 150°C.
TIP41CTU by Fairchild Semiconductor

TIP41CTU

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
TIP120 by Semiconductors

TIP120

Semiconductors

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Minimum DC Current Gain (hFE): 1000;
FZT857TA by Zetex Plc

FZT857TA

Zetex Plc

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 80 MHz; Maximum Collector Current (IC): 3.5 A; Minimum DC Current Gain (hFE): 100;
TIP122 by Weitron Technology

TIP122

Weitron Technology

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 5 A; JEDEC-95 Code: TO-220AB; Terminal Form: THROUGH-HOLE;
2SC5200 by Inchange Semiconductor

2SC5200

Inchange Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 30 MHz; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 15 A;
TIP32C by Micro Commercial Components

TIP32C

Micro Commercial Components

Power Bipolar Transistors; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 3 A; Maximum Collector-Emitter Voltage: 100 V;
TIP111 by Diotec Semiconductor Ag

TIP111

Diotec Semiconductor Ag

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Maximum Collector-Emitter Voltage: 80 V;
2N2219A by Vpt Components

2N2219A

Vpt Components

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): .8 A; Maximum Turn On Time (ton): 35 ns;
FZT857TA by Diodes Incorporated

FZT857TA

Diodes Incorporated

FZT857TA by Diodes Inc. is a NPN BJT transistor with max. collector-emitter voltage of 300V, max. collector current of 3.5A, and min. DC current gain of 100 hFE. Ideal for switching applications, it operates b/w -55 to 150°C and has a transition frequency of 80MHz in a small outline package shape.
BUX87 by New Jersey Semiconductor Products

BUX87

New Jersey Semiconductor Products

NPN; Configuration: SINGLE; Nominal Transition Frequency (fT): 20 MHz; Maximum Collector Current (IC): .5 A; Maximum Collector-Emitter Voltage: 450 V; No. of Elements: 1;
BD13916S by Fairchild Semiconductor

BD13916S

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 12.5 W; Maximum Collector Current (IC): 1.5 A; Transistor Application: SWITCHING;
MJD127T4 by Motorola

MJD127T4

Motorola

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 4 MHz; Maximum Collector Current (IC): 8 A; Maximum VCEsat: 4 V;
TIP122 by Onsemi

TIP122

Onsemi

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 4 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A;