Onsemi - 2SC6080-6

  1. Home
  2. Onsemi - 2SC6080-6
2SC6080-6 by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number 2SC6080-6
Description NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .5 A; Minimum DC Current Gain (hFE): 200;
Datasheet 2SC6080-6 Datasheet
In Stock1,723
NAME DESCRIPTION
Maximum Collector Current (IC): .5 A
Maximum Power Dissipation (Abs): .2 W
Configuration: SINGLE
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Sub-Category: Other Transistors
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 200
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,723 - -

Popular Products

Category Top Products

TIP112 by Thomson Consumer Electronics

TIP112

Thomson Consumer Electronics

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 4 A; JESD-609 Code: e0;
TIP47 by Philips Semiconductors

TIP47

Philips Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 5 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 1 A;
BC546B by Texas Instruments

BC546B

Texas Instruments

BC546B by Texas Instruments is an NPN transistor with a max power dissipation of 0.625W and min DC current gain of 200. It operates at up to 150°C, handles a max collector current of 0.1A, and has a transition frequency of 150MHz. Ideal for low-power applications in electronics circuits.
BC857B by Vishay Intertechnology

BC857B

Vishay Intertechnology

Vishay Intertechnology's BC857B is a PNP transistor with a min DC current gain of 200. It has a max power dissipation of 0.31W and can handle a max collector current of 0.1A. Ideal for applications requiring single configuration transistors in surface mount setups, operating up to 150°C.
BC817-16 by Weitron Technology

BC817-16

Weitron Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .5 A;
MPS-A42 by General Electric Solid State

MPS-A42

General Electric Solid State

MPS-A42 by General Electric Solid State is an NPN transistor with a max power dissipation of 0.625W and a min DC current gain of 40. It operates at temperatures up to 150°C, with a max collector current of 0.5A. This transistor is commonly used in applications requiring high frequency operation, such as RF amplification circuits.
TIP35C by Mospec Semiconductor

TIP35C

Mospec Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 25 A;
BC327-25 by Vishay Intertechnology

BC327-25

Vishay Intertechnology

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .8 A; Minimum DC Current Gain (hFE): 160;
IRF7424TRPBF by International Rectifier

IRF7424TRPBF

International Rectifier

P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Maximum Drain Current (Abs) (ID): 11 A; Maximum Time At Peak Reflow Temperature (s): 30;
BC327-25 by Allegro MicroSystems

BC327-25

Allegro MicroSystems

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .8 A; No. of Elements: 1;
BC327-25 by Tt Electronics Plc

BC327-25

Tt Electronics Plc

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .8 A; Minimum DC Current Gain (hFE): 160;
2N3906 by Philips Semiconductors

2N3906

Philips Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
TIP125 by Silicon Group

TIP125

Silicon Group

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Minimum DC Current Gain (hFE): 1000;
2N4401 by Secos

2N4401

Secos

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .6 A;
TIP117 by Diotec Semiconductor Ag

TIP117

Diotec Semiconductor Ag

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 4 A; Terminal Finish: Tin/Lead (Sn/Pb);
BS170 by Plessey Semiconductors Discrete Components Div

BS170

Plessey Semiconductors Discrete Components Div

Other Transistors;
TIP29C by Intersil

TIP29C

Intersil

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 1 A;
TIP32C by Silicon Group

TIP32C

Silicon Group

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 3 A;
TIP111 by Semitronics

TIP111

Semitronics

TIP111 by Semitronics is an NPN Darlington transistor with a max power dissipation of 50W and a min DC current gain of 500. It can handle a max collector current of 4A and operates at temperatures up to 150°C. This transistor is commonly used in various applications requiring high power amplification and switching capabilities.
BC548 by Sinyork

BC548

Sinyork

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;