Onsemi - 2SC6116LS

  1. Home
  2. Onsemi - 2SC6116LS
2SC6116LS by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number 2SC6116LS
Description NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 6 A; Maximum Operating Temperature: 150 Cel;
Datasheet 2SC6116LS Datasheet
In Stock1,545
NAME DESCRIPTION
Maximum Collector Current (IC): 6 A
Maximum Power Dissipation (Abs): 30 W
Configuration: SINGLE
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Sub-Category: Other Transistors
Polarity or Channel Type: NPN
Surface Mount: NO
Minimum DC Current Gain (hFE): 5.3
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,545 - -

Popular Products

Category Top Products

BSS83PE6327 by Infineon Technologies

BSS83PE6327

Infineon Technologies

BSS83PE6327 by Infineon is a P-CHANNEL transistor with a max drain current of 0.33A and power dissipation of 0.36W. It operates in enhancement mode, suitable for applications requiring high temperature resistance up to 150°C. This surface-mount transistor utilizes metal-oxide semiconductor technology, making it ideal for various electronic circuits.
BC337-16 by Jiangsu Changjiang Electronics Technology

BC337-16

Jiangsu Changjiang Electronics Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 210 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .8 A;
TIP127 by Unisonic Technologies

TIP127

Unisonic Technologies

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Minimum DC Current Gain (hFE): 1000; No. of Elements: 1;
BSS138-G by Weitron Technology

BSS138-G

Weitron Technology

Other Transistors;
D44H11 by Samsung

D44H11

Samsung

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 10 A;
BC856B by Jiangsu Changjiang Electronics Technology

BC856B

Jiangsu Changjiang Electronics Technology

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
MJE3055T by Iskra Semic Capacitors Industry

MJE3055T

Iskra Semic Capacitors Industry

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2 MHz; Maximum Power Dissipation (Abs): 75 W; Maximum Collector Current (IC): 10 A;
TIP29C by Iskra Semic Capacitors Industry

TIP29C

Iskra Semic Capacitors Industry

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 1 A;
TIP120 by Intersil

TIP120

Intersil

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Terminal Finish: Tin/Lead (Sn/Pb);
3001 by Acrian

3001

Acrian

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 5 W; Maximum Collector Current (IC): .25 A; No. of Elements: 1;
BF862 by Philips Semiconductors

BF862

Philips Semiconductors

N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Terminal Finish: MATTE TIN; Field Effect Transistor Technology: JUNCTION; Peak Reflow Temperature (C): 260;
D44H11 by Mospec Semiconductor

D44H11

Mospec Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 15 MHz; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 10 A;
BD139 by Sid Microeletronica S/a

BD139

Sid Microeletronica S/a

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;
MJE350 by Samsung

MJE350

Samsung

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): .5 A; No. of Elements: 1;
BC807-25 by Kodenshi Auk

BC807-25

Kodenshi Auk

PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .8 A; No. of Elements: 1;
BC846B by Shanghai Lunsure Electronic Technology

BC846B

Shanghai Lunsure Electronic Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
2SC5200O by Inchange Semiconductor

2SC5200O

Inchange Semiconductor

Other Transistors;
BC327-25 by North American Philips Discrete Products Div

BC327-25

North American Philips Discrete Products Div

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .8 A; Minimum DC Current Gain (hFE): 160;
MMBT2907A by Vishay Intertechnology

MMBT2907A

Vishay Intertechnology

Vishay Intertechnology's MMBT2907A is a PNP transistor with a max power dissipation of 0.3W, hFE of 50, and fT of 200MHz. Ideal for applications requiring a single configuration, surface mount capability, and operating temperatures up to 150°C.
BC337-40 by Vishay Intertechnology

BC337-40

Vishay Intertechnology

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .8 A; Minimum DC Current Gain (hFE): 250;