Onsemi - 2SC930NPD

  1. Home
  2. Onsemi - 2SC930NPD
2SC930NPD by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number 2SC930NPD
Description NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 170 MHz; Maximum Power Dissipation (Abs): .12 W; Maximum Collector Current (IC): .03 A;
Datasheet 2SC930NPD Datasheet
In Stock1,409
NAME DESCRIPTION
Nominal Transition Frequency (fT): 170 MHz
Maximum Collector Current (IC): .03 A
Maximum Power Dissipation (Abs): .12 W
Configuration: SINGLE
No. of Elements: 1
Maximum Operating Temperature: 125 Cel
Sub-Category: Other Transistors
Polarity or Channel Type: NPN
Surface Mount: NO
Minimum DC Current Gain (hFE): 60
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,409 - -

Popular Products

Category Top Products

3003 by Acrian

3003

Acrian

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 10 W; Maximum Collector Current (IC): .5 A; No. of Elements: 1;
2N2905A by Infineon Technologies

2N2905A

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): .6 A;
BC548C by Unisonic Technologies

BC548C

Unisonic Technologies

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .1 A; Maximum Operating Temperature: 150 Cel;
BCY89 by Philips Semiconductors

BCY89

Philips Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .03 A;
2N2907A by Bytesonic Electronics

2N2907A

Bytesonic Electronics

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A;
2N2219A by Comset Semiconductors

2N2219A

Comset Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .8 A;
BDX53C by Thomson Consumer Electronics

BDX53C

Thomson Consumer Electronics

NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 20 MHz; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 8 A;
MJE3055T by Tt Electronics Plc

MJE3055T

Tt Electronics Plc

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2 MHz; Maximum Power Dissipation (Abs): 75 W; Maximum Collector Current (IC): 10 A;
TIP42C by Jiangsu Changjiang Electronics Technology

TIP42C

Jiangsu Changjiang Electronics Technology

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 6 A;
TIP41C by North American Philips Discrete Products Div

TIP41C

North American Philips Discrete Products Div

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
MMBT3906 by Vishay Intertechnology

MMBT3906

Vishay Intertechnology

Vishay Intertechnology's MMBT3906 is a PNP transistor with a max collector current of 0.2A and min DC current gain of 30. With a max power dissipation of 0.3W and operating temperature up to 150°C, it is ideal for applications requiring high frequency operation such as signal amplification in electronic circuits.
BC817-40 by Shanghai Lunsure Electronic Technology

BC817-40

Shanghai Lunsure Electronic Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .5 A;
MPSA42 by Philips Semiconductors

MPSA42

Philips Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .5 A;
TIP115 by Tt Electronics Plc

TIP115

Tt Electronics Plc

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 4 A; Minimum DC Current Gain (hFE): 500;
MMBT3904 by Samsung

MMBT3904

Samsung

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .2 A;
BC807-40 by Taiwan Semiconductor

BC807-40

Taiwan Semiconductor

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .5 A;
TIP117 by Philips Semiconductors

TIP117

Philips Semiconductors

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 4 A; Terminal Finish: Tin/Lead (Sn/Pb);
TIP111 by Jiangsu Changjiang Electronics Technology

TIP111

Jiangsu Changjiang Electronics Technology

TIP111 by Jiangsu Changjiang Electronics Technology is an NPN Darlington transistor with a max power dissipation of 50W, min DC current gain of 500, and max collector current of 4A. It is commonly used in various applications requiring high power amplification and switching capabilities.
TIP41C by Philips Semiconductors

TIP41C

Philips Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
BD243C by Plessey Semiconductors Discrete Components Div

BD243C

Plessey Semiconductors Discrete Components Div

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 8 A; Maximum Operating Temperature: 150 Cel;