Onsemi - 2SD1012G-SPA

  1. Home
  2. Onsemi - 2SD1012G-SPA
2SD1012G-SPA by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number 2SD1012G-SPA
Description NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .7 A; Terminal Finish: Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni);
Datasheet 2SD1012G-SPA Datasheet
In Stock313
NAME DESCRIPTION
Maximum Collector Current (IC): .7 A
Maximum Power Dissipation (Abs): .25 W
Configuration: SINGLE
No. of Elements: 1
Maximum Operating Temperature: 125 Cel
Sub-Category: Other Transistors
Polarity or Channel Type: NPN
Surface Mount: NO
Minimum DC Current Gain (hFE): 280
Terminal Finish: Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
313 $0.098 $30.674

Popular Products

Category Top Products

BC857B,215 by NXP Semiconductors

BC857B,215

NXP Semiconductors

BC857B,215 by NXP Semiconductors is a PNP BJT transistor for switching applications. It has a max VCEsat of 0.65V and min hFE of 220. With a max collector-emitter voltage of 45V, it operates at temperatures up to 150°C.
BC847C by NXP Semiconductors

BC847C

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;
2N2219A by Semitronics

2N2219A

Semitronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .8 A;
SMMBT4403LT1G by Onsemi

SMMBT4403LT1G

Onsemi

SMMBT4403LT1G by Onsemi is a PNP BJT transistor for switching applications. It has a VCEsat of 0.75V, hFE of 100, and IC of 0.6A. With a max operating temperature of 150°C, it is ideal for small outline surface mount designs requiring fast switching speeds up to 200MHz.
MMBT2222A by Kodenshi Auk

MMBT2222A

Kodenshi Auk

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .6 A; Package Shape: RECTANGULAR;
2N3904 by Secos

2N3904

Secos

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Package Body Material: PLASTIC/EPOXY;
2N3904TF by Rochester Electronics

2N3904TF

Rochester Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Package Style (Meter): CYLINDRICAL;
BC847AE6327HTSA1 by Infineon Technologies

BC847AE6327HTSA1

Infineon Technologies

BC847AE6327HTSA1 by Infineon Technologies is a NPN BJT transistor with hFE of 110, VCE of 45V, and fT of 250MHz. Ideal for switching applications, it operates at up to 150°C and has a collector current of 0.1A.
2N2219A by Micro Electronics

2N2219A

Micro Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .8 A;
FMMT458TA by Diodes Incorporated

FMMT458TA

Diodes Incorporated

FMMT458TA by Diodes Inc. is a NPN BJT transistor with 100 min hFE, 400V VCEO, and 50MHz fT. Ideal for switching applications, it comes in a small outline package with Gull Wing terminals for surface mounting. Operating up to 150°C, it has a max power dissipation of 0.5W.
2N2222A by Diotec Semiconductor Ag

2N2222A

Diotec Semiconductor Ag

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .6 A; Maximum Time At Peak Reflow Temperature (s): 10;
MMBT3904 by Nte Electronics

MMBT3904

Nte Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Maximum Operating Temperature: 150 Cel;
2N2907A by National Semiconductor

2N2907A

National Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A;
BC847B by Fairchild Semiconductor

BC847B

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
BC817-25LT1G by Onsemi

BC817-25LT1G

Onsemi

BC817-25LT1G by Onsemi is a NPN BJT with 160 min hFE, 45V VCEO, and 100MHz fT. Ideal for small signal applications in electronics due to its compact SMALL OUTLINE package and high transition frequency. Suitable for surface mount designs requiring low power dissipation and moderate collector current.
BC547-B by Samsung

BC547-B

Samsung

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .1 A; Qualification: Not Qualified;
MMBT2907A by Lite-on Semiconductor

MMBT2907A

Lite-on Semiconductor

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; JESD-30 Code: R-PDSO-G3;
2N3906 by Toshiba

2N3906

Toshiba

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
BC846BPN,115 by Nexperia

BC846BPN,115

Nexperia

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
BC847B,215 by NXP Semiconductors

BC847B,215

NXP Semiconductors

NXP Semiconductors' BC847B,215 is a NPN BJT transistor for switching applications. It has a max VCEsat of 0.6V, hFE of 200, and can handle a max IC of 0.1A. With a package style of small outline and peak reflow temperature of 260°C, it's ideal for compact electronic devices requiring high-speed switching capabilities.