2SD1203T-H by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	2SD1203T-H
Description	PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 130 MHz; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): 5 A;
Datasheet	2SD1203T-H Datasheet
In Stock	921

NAME	DESCRIPTION
Nominal Transition Frequency (fT):	130 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	5 A
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
JEDEC-95 Code:	TO-251
Polarity or Channel Type:	PNP
Surface Mount:	NO
Minimum DC Current Gain (hFE):	200
No. of Terminals:	3
Maximum Power Dissipation (Abs):	20 W
Maximum Collector-Emitter Voltage:	50 V
Terminal Position:	SINGLE
Package Style (Meter):	IN-LINE
JESD-30 Code:	R-PSIP-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Maximum Operating Temperature:	150 Cel
Maximum Collector-Base Capacitance:	60 pF
Case Connection:	COLLECTOR
Maximum VCEsat:	550 V
Maximum Power Dissipation Ambient:	1 W

Pricing (USD)

Qty.	Unit Price	Ext. Price
921	-	-

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