Onsemi - 2SK3826

2SK3826 by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number 2SK3826
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 45 W; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;
Datasheet 2SK3826 Datasheet
In Stock2,083
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 26 A
Maximum Pulsed Drain Current (IDM): 104 A
Surface Mount: NO
Terminal Finish: Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
No. of Terminals: 3
Maximum Power Dissipation (Abs): 45 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Power Dissipation Ambient: 1.75 W
Maximum Drain-Source On Resistance: .08 ohm
Avalanche Energy Rating (EAS): 80 mJ
JEDEC-95 Code: TO-220AB
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 100 V
Maximum Drain Current (Abs) (ID): 26 A
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Pricing (USD)

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