Onsemi - 3LN01C-TB-H

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3LN01C-TB-H by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number 3LN01C-TB-H
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Elements: 1;
Datasheet 3LN01C-TB-H Datasheet
In Stock2,283
NAME DESCRIPTION
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): .15 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: Tin/Bismuth (Sn/Bi)
JESD-609 Code: e6
Maximum Power Dissipation (Abs): .25 W
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (Abs) (ID): .15 A
Moisture Sensitivity Level (MSL): 1
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Pricing (USD)

Qty. Unit Price Ext. Price
2,283 $0.076 $173.508

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