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| Manufacturer | Onsemi |
|---|---|
| Manufacturer's Part Number | 3LN01M-TL-H |
| Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Terminal Finish: TIN BISMUTH; Maximum Drain Current (ID): .15 A; |
| Datasheet | 3LN01M-TL-H Datasheet |
| In Stock | 1,605 |
| NAME | DESCRIPTION |
|---|---|
| Other Names: |
2156-3LN01M-TL-H 3LN01M-TL-HOSCT 3LN01M-TL-HOSDKR ONSONS3LN01M-TL-H 3LN01M-TL-HOSTR 2156-3LN01M-TL-H-ONTR-ND 3LN01M-TL-H-ND |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Configuration: | SINGLE |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Drain Current (ID): | .15 A |
| Sub-Category: | FET General Purpose Power |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |
| Terminal Finish: | TIN BISMUTH |
| JESD-609 Code: | e6 |
| Maximum Power Dissipation (Abs): | .15 W |
| No. of Elements: | 1 |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Drain Current (Abs) (ID): | .15 A |
| Peak Reflow Temperature (C): | 260 |
| Moisture Sensitivity Level (MSL): | 1 |









