Onsemi - 3SK266

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3SK266 by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number 3SK266
Description N-CHANNEL; Maximum Drain Current (ID): .03 A; Field Effect Transistor Technology: METAL SEMICONDUCTOR; Maximum Drain Current (Abs) (ID): .03 A; Maximum Power Dissipation Ambient: .2 W;
Datasheet 3SK266 Datasheet
In Stock1,905
NAME DESCRIPTION
Field Effect Transistor Technology: METAL SEMICONDUCTOR
Maximum Drain Current (ID): .03 A
Maximum Drain Current (Abs) (ID): .03 A
Sub-Category: FET RF Small Signal
Polarity or Channel Type: N-CHANNEL
Maximum Power Dissipation Ambient: .2 W
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