Onsemi - 50C02CH

  1. Home
  2. Onsemi - 50C02CH
50C02CH by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number 50C02CH
Description NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .7 W; Maximum Collector Current (IC): .5 A; No. of Elements: 1;
Datasheet 50C02CH Datasheet
In Stock140
NAME DESCRIPTION
Maximum Collector Current (IC): .5 A
Maximum Power Dissipation (Abs): .7 W
Configuration: SINGLE
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Sub-Category: Other Transistors
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 300
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
140 - -

Popular Products

Category Top Products

BC546B by Texas Instruments

BC546B

Texas Instruments

BC546B by Texas Instruments is an NPN transistor with a max power dissipation of 0.625W and min DC current gain of 200. It operates at up to 150°C, handles a max collector current of 0.1A, and has a transition frequency of 150MHz. Ideal for low-power applications in electronics circuits.
BD140 by Inchange Semiconductor

BD140

Inchange Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 75 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;
BD139-16 by Secos

BD139-16

Secos

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 13 W; Maximum Collector Current (IC): 1.5 A;
2N2219A by Ksl Microdevices

2N2219A

Ksl Microdevices

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .8 A;
TIP115 by Asi Semiconductor

TIP115

Asi Semiconductor

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 4 A; Minimum DC Current Gain (hFE): 500;
MMBT4401 by Unisonic Technologies

MMBT4401

Unisonic Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .6 A;
2N2219A by Bharat Electronics

2N2219A

Bharat Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .8 A;
BC807-25 by Itt Components

BC807-25

Itt Components

PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .5 A; Maximum Operating Temperature: 150 Cel;
199 by Solitron Devices

199

Solitron Devices

Other Transistors;
MMBT3904LT1 by Synsemi

MMBT3904LT1

Synsemi

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .2 A;
TIP147 by Comset Semiconductors

TIP147

Comset Semiconductors

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 10 A; Minimum DC Current Gain (hFE): 500;
BC847B by Itt Components

BC847B

Itt Components

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
MMBT2222ALT1 by Jiangsu Changjiang Electronics Technology

MMBT2222ALT1

Jiangsu Changjiang Electronics Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .6 A;
40474 by National Semiconductor

40474

National Semiconductor

40474 by National Semiconductor is an NPN transistor with a max power dissipation of 0.18W, hFE of 275, and fT of 900MHz. It is used in applications requiring low collector current such as signal amplification in electronic circuits due to its single configuration.
BC557B by Semiconductors

BC557B

Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A; JESD-609 Code: e0;
BC846 by Plessey Semiconductors Discrete Components Div

BC846

Plessey Semiconductors Discrete Components Div

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
2N4401 by North American Philips Discrete Products Div

2N4401

North American Philips Discrete Products Div

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .6 A;
TIP111 by Mospec Semiconductor

TIP111

Mospec Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 4 A; Maximum Operating Temperature: 150 Cel;
IRF9530 by Thomson Consumer Electronics

IRF9530

Thomson Consumer Electronics

P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 88 W; Operating Mode: ENHANCEMENT MODE; Maximum Operating Temperature: 150 Cel;
BC557B by Shanghai Lunsure Electronic Technology

BC557B

Shanghai Lunsure Electronic Technology

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A; No. of Elements: 1;