Onsemi - 5HN01SS-TL-E

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5HN01SS-TL-E by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number 5HN01SS-TL-E
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Package Shape: RECTANGULAR; Transistor Application: SWITCHING;
Datasheet 5HN01SS-TL-E Datasheet
In Stock1,047
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): .1 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: TIN BISMUTH
JESD-609 Code: e6
No. of Terminals: 3
Minimum DS Breakdown Voltage: 50 V
Maximum Power Dissipation (Abs): .15 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Peak Reflow Temperature (C): 260
Maximum Power Dissipation Ambient: .15 W
Maximum Drain-Source On Resistance: 7.5 ohm
Moisture Sensitivity Level (MSL): 1
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Pricing (USD)

Qty. Unit Price Ext. Price
1,047 $0.038 $39.786

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