5LN01S-TL-E by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	5LN01S-TL-E
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Position: DUAL;
Datasheet	5LN01S-TL-E Datasheet
In Stock	1,298

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	.1 A
Sub-Category:	FET General Purpose Powers
Surface Mount:	YES
Terminal Finish:	Tin/Bismuth (Sn/Bi)
No. of Terminals:	3
Maximum Power Dissipation (Abs):	.15 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	7.8 ohm
Moisture Sensitivity Level (MSL):	1
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e6
Minimum DS Breakdown Voltage:	50 V
Maximum Drain Current (Abs) (ID):	.1 A

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,298	$0.076	$98.648

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

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