Onsemi - 6LN04MH

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6LN04MH by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number 6LN04MH
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .6 W; Package Shape: RECTANGULAR; No. of Terminals: 3;
Datasheet 6LN04MH Datasheet
In Stock340
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): .2 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 3
Minimum DS Breakdown Voltage: 60 V
Qualification: Not Qualified
Maximum Power Dissipation (Abs): .6 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (Abs) (ID): .2 A
Maximum Drain-Source On Resistance: 2.9 ohm
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