AFGHL50T65SQDC by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	AFGHL50T65SQDC
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 238 W; Maximum Collector Current (IC): 100 A; Maximum VCEsat: 2.1 V;
Datasheet	AFGHL50T65SQDC Datasheet
In Stock	198

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	100 A
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Transistor Application:	POWER CONTROL
Maximum Gate-Emitter Threshold Voltage:	6.4 V
Surface Mount:	NO
Terminal Finish:	Matte Tin (Sn) - annealed
Nominal Turn Off Time (toff):	160.8 ns
No. of Terminals:	3
Maximum Power Dissipation (Abs):	238 W
Terminal Position:	SINGLE
Nominal Turn On Time (ton):	32 ns
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Maximum Operating Temperature:	175 Cel
Other Names:	AFGHL50T65SQDCOS
JEDEC-95 Code:	TO-247
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Maximum Collector-Emitter Voltage:	650 V
Additional Features:	RC-IGBT
Maximum Gate-Emitter Voltage:	20 V
Reference Standard:	AEC-Q101
Peak Reflow Temperature (C):	NOT SPECIFIED
Maximum VCEsat:	2.1 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
198	-	-

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