Onsemi - BC517G

  1. Home
  2. Onsemi - BC517G
BC517G by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number BC517G
Description NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): 1 A; JEDEC-95 Code: TO-92;
Datasheet BC517G Datasheet
In Stock1,519
NAME DESCRIPTION
Nominal Transition Frequency (fT): 200 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 1 A
Configuration: DARLINGTON
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
JEDEC-95 Code: TO-92
Sub-Category: Other Transistors
Polarity or Channel Type: NPN
Surface Mount: NO
Minimum DC Current Gain (hFE): 30000
Terminal Finish: TIN SILVER COPPER
JESD-609 Code: e1
No. of Terminals: 3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 30 V
Terminal Position: BOTTOM
Package Style (Meter): CYLINDRICAL
JESD-30 Code: O-PBCY-T3
No. of Elements: 1
Package Shape: ROUND
Terminal Form: THROUGH-HOLE
Maximum Operating Temperature: 150 Cel
Peak Reflow Temperature (C): 260
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,519 - -

Popular Products

Category Top Products

MMBT3904 by Jiangsu Changjiang Electronics Technology

MMBT3904

Jiangsu Changjiang Electronics Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .2 A;
BC817-40W,135 by Nexperia

BC817-40W,135

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; Terminal Form: GULL WING;
ZTX651 by Zetex Plc

ZTX651

Zetex Plc

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 175 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 2 A;
BC846B by National Semiconductor

BC846B

National Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
ULN2003AD by Texas Instruments

ULN2003AD

Texas Instruments

ULN2003AD by Texas Instruments is a NPN BJT with 7 elements, max IC of 0.5A, and VCEsat of 1.6V. Ideal for switching applications, it has a max VCE of 50V and comes in a small outline package style suitable for surface mount technology.
BC817-25,235 by NXP Semiconductors

BC817-25,235

NXP Semiconductors

NXP Semiconductors' BC817-25,235 is a NPN BJT transistor with max VCEsat of 0.7V and hFE of 160. Ideal for switching applications, it has a max IC of 0.5A and operates up to 150°C. Its small outline package with gull wing terminals makes it suitable for surface mount designs.
2N3906 by International Devices

2N3906

International Devices

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
JANTX2N2222AUBT/R by Microchip Technology

JANTX2N2222AUBT/R

Microchip Technology

JANTX2N2222AUBT/R by Microchip is a NPN BJT transistor for switching applications. It has hFE of 30, Vce of 50V, and Ic of 0.8A. With a turn on time of 35ns and turn off time of 300ns, it's ideal for fast-switching circuits in military-grade electronics per MIL-19500/255 standards.
MMBT3904 by Good-ark Electronics

MMBT3904

Good-ark Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Terminal Position: DUAL;
BC547C by Itt Semiconductor

BC547C

Itt Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
2N2907AUB by Tt Electronics Plc

2N2907AUB

Tt Electronics Plc

PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .6 A; Maximum Power Dissipation Ambient: .5 W; Package Body Material: UNSPECIFIED;
PN2222ABU by Onsemi

PN2222ABU

Onsemi

PN2222ABU by Onsemi is a NPN bipolar junction transistor (BJT) with a max collector-emitter voltage of 40V and a max collector current of 1A. It is commonly used for switching applications due to its high DC current gain (hFE) of 40 and fast turn on/off times (ton: 35ns, toff: 285ns).
BC817-40 by Micro Commercial Components

BC817-40

Micro Commercial Components

Small Signal Bipolar Transistors; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .31 W; Maximum Collector Current (IC): .5 A;
BC847C by Changzhou Galaxy Century Microelectronics

BC847C

Changzhou Galaxy Century Microelectronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
2N2222AUB by Central Semiconductor

2N2222AUB

Central Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
2N2222A by Microchip Technology

2N2222A

Microchip Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Minimum Operating Temperature: -65 Cel; Terminal Position: BOTTOM;
2N3904 by Diotec Semiconductor Ag

2N3904

Diotec Semiconductor Ag

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .2 A;
2N3904 by Lite-on Semiconductor

2N3904

Lite-on Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Maximum Turn On Time (ton): 70 ns;
2N3906 by Central Semiconductor

2N3906

Central Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
MMBT2222AWT1G by Onsemi

MMBT2222AWT1G

Onsemi

MMBT2222AWT1G by Onsemi is a NPN BJT transistor with 3 terminals, ideal for amplifier applications. It has a max collector-emitter voltage of 40V, max collector current of 0.6A, and min DC current gain of 40. With a package style of small outline and surface mount capability, it operates at up to 150°C.