Onsemi - BC639-16ZL1G

  1. Home
  2. Onsemi - BC639-16ZL1G
BC639-16ZL1G by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number BC639-16ZL1G
Description NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): 1 A;
Datasheet BC639-16ZL1G Datasheet
In Stock2,341
NAME DESCRIPTION
Nominal Transition Frequency (fT): 200 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 1 A
Configuration: SINGLE
Transistor Element Material: SILICON
JEDEC-95 Code: TO-226
Sub-Category: Other Transistors
Polarity or Channel Type: NPN
Surface Mount: NO
Minimum DC Current Gain (hFE): 25
Terminal Finish: TIN SILVER COPPER
JESD-609 Code: e1
No. of Terminals: 3
Qualification: Not Qualified
Maximum Power Dissipation (Abs): .8 W
Maximum Collector-Emitter Voltage: 80 V
Terminal Position: BOTTOM
Package Style (Meter): CYLINDRICAL
JESD-30 Code: O-PBCY-T3
No. of Elements: 1
Package Shape: ROUND
Terminal Form: THROUGH-HOLE
Maximum Operating Temperature: 150 Cel
Peak Reflow Temperature (C): 260
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
2,341 - -

Popular Products

Category Top Products

BC547B by Weitronic Enterprise

BC547B

Weitronic Enterprise

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
BC847C by General Semiconductor

BC847C

General Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
MMBT2222ALT1 by Micro Commercial Components

MMBT2222ALT1

Micro Commercial Components

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .6 A; Transistor Element Material: SILICON;
MMBT3906TT1G by Onsemi

MMBT3906TT1G

Onsemi

MMBT3906TT1G by Onsemi is a PNP small signal BJT transistor with a max collector-emitter voltage of 40V. It has a min DC current gain of 30 and can handle a max collector current of 0.2A. This transistor is commonly used in amplifier applications due to its high transition frequency of 250MHz.
MMBT2222A by Lite-on Semiconductor

MMBT2222A

Lite-on Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .6 A; Terminal Form: GULL WING;
BC817-25 by Changzhou Galaxy Century Microelectronics

BC817-25

Changzhou Galaxy Century Microelectronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 170 MHz; Maximum Collector Current (IC): .5 A; No. of Terminals: 3;
SBC817-40LT3G by Good-ark Electronics

SBC817-40LT3G

Good-ark Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .5 A;
BC547B by Motorola

BC547B

Motorola

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .1 A; Maximum Power Dissipation Ambient: 1.5 W;
2N2907A by Silicon Transistor

2N2907A

Silicon Transistor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A;
JANTX2N2222AUA by Microchip Technology

JANTX2N2222AUA

Microchip Technology

JANTX2N2222AUA by Microchip is a NPN BJT transistor with 4 terminals, ideal for switching applications. It has a max power dissipation of 0.5W, hFE of 30, and can handle up to 0.8A collector current. With a max operating temp of 200°C and fT of 250MHz, it meets MIL-19500/255 standards for high-performance electronics.
JANTX2N2222AUA by M/a-com Technology Solutions

JANTX2N2222AUA

M/a-com Technology Solutions

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .8 A; No. of Terminals: 4; Terminal Form: NO LEAD;
2N3906 by STMicroelectronics

2N3906

STMicroelectronics

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
BC817-40 by Samsung

BC817-40

Samsung

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .8 A; Terminal Position: DUAL;
2N2905A by Semicoa

2N2905A

Semicoa

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): .6 A;
BC547BTA by Fairchild Semiconductor

BC547BTA

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
2N3904 by Loras Industries

2N3904

Loras Industries

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
MMBT2907A by Secos

MMBT2907A

Secos

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; Minimum DC Current Gain (hFE): 100;
2N2907A by Semitronics

2N2907A

Semitronics

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A;
2N2222A by International Devices

2N2222A

International Devices

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
MMBT2907A by Infineon Technologies

MMBT2907A

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .6 A;